UCC217505.7kVrms ±10A, single-channel isolated gate driver w/ DESAT & internal miller clamp for IGBT/SiCFETs | Evaluation and Demonstration Boards and Kits | 5 | Active | The UCC21750-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21750-Q1 has up to ±10-A peak source and sink current.
The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage, 12.8-kV PK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and > 150-V/ns common mode noise immunity (CMTI).
The UCC21750-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.
The UCC21750-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121-V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21750-Q1 has up to ±10-A peak source and sink current.
The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage, 12.8-kV PK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , and > 150-V/ns common mode noise immunity (CMTI).
The UCC21750-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be used for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost. |
| Evaluation Boards | 1 | Active | |
UCC21755-Q1Automotive ±10-A isolated single-channel gate driver with active protection, and isolated sensing | Isolators | 1 | Active | The UCC21755-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. UCC21755-Q1 has up to ±10A peak source and sink current.
The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).
The UCC21755-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.
The UCC21755-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. UCC21755-Q1 has up to ±10A peak source and sink current.
The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).
The UCC21755-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost. |
UCC21756-Q1Automotive, ±10-A isolated single-channel gate driver with active protection and iso | Isolators - Gate Drivers | 1 | Active | The UCC21756-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. UCC21756-Q1 has up to ±10A peak source and sink current.
The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).
The UCC21756-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.
The UCC21756-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance, and robustness. UCC21756-Q1 has up to ±10A peak source and sink current.
The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40-years isolation barrier life, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).
The UCC21756-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost. |
UCC21759Automotive 3.0kVrms, ±10A single-channel isolated gate driver w/ DESAT & internal clamp for IGBT/SiC | Isolators | 1 | Obsolete | The UCC21759-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 900V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21759-Q1 has up to ±10A peak source and sink current.
The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 636VRMS working voltage with longer than 40 years isolation barrier life, 6kVPK surge immunity, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).
The UCC21759-Q1 includes the state-of-art protection features, such as fast short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO optimized for SiC and IGBT power transistors. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.
The UCC21759-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 900V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21759-Q1 has up to ±10A peak source and sink current.
The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 636VRMS working voltage with longer than 40 years isolation barrier life, 6kVPK surge immunity, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).
The UCC21759-Q1 includes the state-of-art protection features, such as fast short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO optimized for SiC and IGBT power transistors. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost. |
UCC21759-Q1Automotive 3.0kVrms, ±10A single-channel isolated gate driver w/ DESAT & internal clamp for IGBT/SiC | Isolators | 1 | Active | The UCC21759-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 900V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21759-Q1 has up to ±10A peak source and sink current.
The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 636VRMS working voltage with longer than 40 years isolation barrier life, 6kVPK surge immunity, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).
The UCC21759-Q1 includes the state-of-art protection features, such as fast short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO optimized for SiC and IGBT power transistors. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.
The UCC21759-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 900V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21759-Q1 has up to ±10A peak source and sink current.
The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 636VRMS working voltage with longer than 40 years isolation barrier life, 6kVPK surge immunity, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).
The UCC21759-Q1 includes the state-of-art protection features, such as fast short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO optimized for SiC and IGBT power transistors. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost. |
UCC2305Automotive 5V to 18V HID Lamp controller | Integrated Circuits (ICs) | 4 | Active | The UCC2305 integrates all of the functions required to control and drive one HID lamp. The UCC2305 is tailored to the demanding, fast turn-on requirements of automobile headlamps, but is also applicable to all other lighting applications where HID lamps are selected. HID lamps are ideal for any lighting applications that can benefit from very high efficiency, blue-white light color, small physical lamp size, and very long life.
The UCC2305 contains a complete current mode pulse-width modulator, a lamp power regulator, lamp temperature compensation, and total fault protection. Lamp temperature compensation is critical for automobile headlamps, because without compensation, light output varies dramatically from a cold lamp to one that is fully warmed up.
The UCC2305 is tested for full performance with ambient temperature from –40°C to 105°C.
The UCC2305 integrates all of the functions required to control and drive one HID lamp. The UCC2305 is tailored to the demanding, fast turn-on requirements of automobile headlamps, but is also applicable to all other lighting applications where HID lamps are selected. HID lamps are ideal for any lighting applications that can benefit from very high efficiency, blue-white light color, small physical lamp size, and very long life.
The UCC2305 contains a complete current mode pulse-width modulator, a lamp power regulator, lamp temperature compensation, and total fault protection. Lamp temperature compensation is critical for automobile headlamps, because without compensation, light output varies dramatically from a cold lamp to one that is fully warmed up.
The UCC2305 is tested for full performance with ambient temperature from –40°C to 105°C. |
UCC231134A/5A single-channel opto-compatible isolated gate driver with functional isolation (1.2kVRMS) | Isolators | 1 | Active | The UCC23113 opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 5-A source and 5-A sink peak output current and 1.5-kV DC functional isolation. The high supply voltage range of 30 V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. The UCC23113 can drive both low-side and high-side power FETs.
Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common-mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs found in optocoupler gate drivers. It is offered in a stretched SO6 package with >8.5-mm creepage and clearance, and a mold compound from material group I which has a comparative tracking index (CTI) > 600 V.
The high performance and reliability of the UCC23113 makes it ideal for use in all types of motor drives, solar inverters, industrial power supplies, and appliances. The higher operating temperature opens up opportunities for applications not previously able to be supported by traditional optocouplers.
The UCC23113 opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 5-A source and 5-A sink peak output current and 1.5-kV DC functional isolation. The high supply voltage range of 30 V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. The UCC23113 can drive both low-side and high-side power FETs.
Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common-mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs found in optocoupler gate drivers. It is offered in a stretched SO6 package with >8.5-mm creepage and clearance, and a mold compound from material group I which has a comparative tracking index (CTI) > 600 V.
The high performance and reliability of the UCC23113 makes it ideal for use in all types of motor drives, solar inverters, industrial power supplies, and appliances. The higher operating temperature opens up opportunities for applications not previously able to be supported by traditional optocouplers. |
UCC23313Automotive 3.75kVrms, 4A/5A single-channel opto-compatible isolated gate driver with 8V/12V UVLO | Isolators - Gate Drivers | 7 | Active | The UCC23313-Q1 is an Opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 4.5-A source and 5.3-A sink peak output current and 3.75-kVRMSbasic isolation rating. The high supply voltage range of 33 V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. UCC23313-Q1 can drive both low side and high side power FETs. Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs found in optocoupler gate drivers. It is offered in a stretched SO6 package with > 8.5-mm creepage and clearance, and a mold compound from material group I, which has a comparative tracking index (CTI) > 600 V. UCC23313-Q1’s high performance and reliability makes it ideal for use in automotive motor drives such as the traction inverter, on-board chargers, DC charging stations, and automotive HVAC and heating systems. The higher operating temperature opens up opportunities for applications not previously able to be supported by traditional optocouplers.
The UCC23313-Q1 is an Opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 4.5-A source and 5.3-A sink peak output current and 3.75-kVRMSbasic isolation rating. The high supply voltage range of 33 V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. UCC23313-Q1 can drive both low side and high side power FETs. Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs found in optocoupler gate drivers. It is offered in a stretched SO6 package with > 8.5-mm creepage and clearance, and a mold compound from material group I, which has a comparative tracking index (CTI) > 600 V. UCC23313-Q1’s high performance and reliability makes it ideal for use in automotive motor drives such as the traction inverter, on-board chargers, DC charging stations, and automotive HVAC and heating systems. The higher operating temperature opens up opportunities for applications not previously able to be supported by traditional optocouplers. |
UCC23313-Q1Automotive 3.75kVrms, 4A/5A single-channel opto-compatible isolated gate driver with 8V/12V UVLO | Isolators | 1 | Active | The UCC23313-Q1 is an Opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 4.5-A source and 5.3-A sink peak output current and 3.75-kVRMSbasic isolation rating. The high supply voltage range of 33 V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. UCC23313-Q1 can drive both low side and high side power FETs. Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs found in optocoupler gate drivers. It is offered in a stretched SO6 package with > 8.5-mm creepage and clearance, and a mold compound from material group I, which has a comparative tracking index (CTI) > 600 V. UCC23313-Q1’s high performance and reliability makes it ideal for use in automotive motor drives such as the traction inverter, on-board chargers, DC charging stations, and automotive HVAC and heating systems. The higher operating temperature opens up opportunities for applications not previously able to be supported by traditional optocouplers.
The UCC23313-Q1 is an Opto-compatible, single-channel, isolated gate driver for IGBTs, MOSFETs and SiC MOSFETs, with 4.5-A source and 5.3-A sink peak output current and 3.75-kVRMSbasic isolation rating. The high supply voltage range of 33 V allows the use of bipolar supplies to effectively drive IGBTs and SiC power FETs. UCC23313-Q1 can drive both low side and high side power FETs. Key features and characteristics bring significant performance and reliability upgrades over standard opto-coupler based gate drivers while maintaining pin-to-pin compatibility in both schematic and layout design. Performance highlights include high common mode transient immunity (CMTI), low propagation delay, and small pulse width distortion. Tight process control results in small part-to-part skew. The input stage is an emulated diode (e-diode) which means long term reliability and excellent aging characteristics compared to traditional LEDs found in optocoupler gate drivers. It is offered in a stretched SO6 package with > 8.5-mm creepage and clearance, and a mold compound from material group I, which has a comparative tracking index (CTI) > 600 V. UCC23313-Q1’s high performance and reliability makes it ideal for use in automotive motor drives such as the traction inverter, on-board chargers, DC charging stations, and automotive HVAC and heating systems. The higher operating temperature opens up opportunities for applications not previously able to be supported by traditional optocouplers. |
