STX616High voltage NPN power transistor | Transistors | 1 | Obsolete | The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage withstand capability. The device is designed for use in SMPS and battery charger. |
| Single Bipolar Transistors | 1 | Obsolete | |
| Transistors | 1 | Obsolete | |
| Transistors | 1 | Obsolete | |
| FETs, MOSFETs | 2 | Active | |
STY105NM50NN-channel 500 V, 0.018 Ohm typ., 110 A MDmesh II Power MOSFET in Max247 package | FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
STY139N65M5N-channel 650 V, 0.014 Ohm typ., 130 A MDmesh M5 Power MOSFET in Max247 package | Discrete Semiconductor Products | 1 | Active | This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. |
STY145N65M5N-channel 650 V, 0.012 Ohm typ., 138 A MDmesh M5 Power MOSFET in a Max247 package | Discrete Semiconductor Products | 1 | Active | This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. |
STY50N105DK5N-channel 1050 V, 0.110 Ohm typ., 46 A MDmesh DK5 Power MOSFET in a Max247 package | FETs, MOSFETs | 1 | Active | This very high voltage N-channel Power MOSFET is part of the MDmesh DK5 fast-recovery diode series. The MDmesh DK5 combines very low recovery charge (Qrr) and recovery time (trr) with an excellent improvement in RDS(on)* area and one of the most effective switching behaviors, ideal for half bridge and full bridge converters. |
STY60NK30ZN-channel 300 V, 33 mOhm typ., 60 A SuperMESH Power MOSFET in a Max247 package | Single FETs, MOSFETs | 1 | Active | The SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. |
