| RF Misc ICs and Modules | 1 | Active | |
STW81200Wide Band Frac-Integer-N Integrated Synthesizer | Clock/Timing | 2 | LTB | The STW81200 is a dual architecture frequency synthesizer (Fractional-N and Integer-N), that features three low phase-noise VCOs with a fundamental frequency range of 3.0 GHz to 6.0 GHz and a programmable dual RF output divider stage which allows coverage from 46.875 MHz to 6 GHz.
The STW81200 optimizes size and cost of the final application thanks to the integration of low- noise LDO voltage regulators and internally-matched broadband RF outputs.
The STW81200 is compatible with a wide range of supply voltages (from 3.0 V to 5.4 V) providing to the end user a very high level of flexibility which trades off excellent performance with power dissipation requirements. A low-power functional mode (software controlled) gives an extra power saving.
Additional features include crystal oscillator core, external VCO mode and output-mute function. |
| Evaluation Boards | 1 | Active | The STW81200-EVB evaluation kit allows the user to program and operate the STW81200 RF fractional/integer synthesizer and its integrated VCOs and LDOs.
The kit includes PC-compatible software with a Graphical User Interface (STSW-RFSOL002) allowing the user to write and read all device registers. This gives direct control of circuit functions such as: operating frequency, reference frequency, input mode, charge pump current and low-power modes.
The user-oriented GUI aids understanding of the performance, features and characteristics of the STW81200 device under test in a laboratory environment. The GUI displays instant register descriptions when the user slides the mouse over the displayed areas, command buttons and fields. |
| RF and Wireless | 1 | Active | |
| RF and Wireless | 1 | Active | |
| Discrete Semiconductor Products | 1 | Active | |
STW88N65M5-4N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in a TO247-4 package | Single FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. |
STW8N120K5N-channel 1200 V, 1.65 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-247 package | FETs, MOSFETs | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STW8N90K5N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-247 package | Discrete Semiconductor Products | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STW8NK80ZN-channel 800 V, 1.3 Ohm, 6.2 A, TO-247 Zener-protected SuperMESH(TM) Power MOSFET | Transistors | 1 | Active | The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. |
