STPST3H100-YAutomotive 100 V, 3 A Power Schottky Trench Rectifier | Discrete Semiconductor Products | 1 | Active | This 3 A, 100 V rectifier is based on ST trench technology that achieves the best-in-class VF/IR trade-off for a given silicon surface.
Integrated in flat and space-saving packages, this STPST3H100-Y trench, and automotive-graded device is intended to be used in high frequency miniature switched mode power supplies such as in automotive, DC/DC converters or ECU power supply. It is also adapted to freewheeling applications, OR-ring, or reverse polarity protection. |
STPST5Automotive 100 V, 5 A Power Schottky Trench Rectifier | Single Diodes | 7 | Active | This 5 A, 100 V rectifier is based on ST trench technology that achieves the best-in-class VF/IR trade-off for a given silicon surface.
Integrated in a DPAK package, this STPST5H100SB trench rectifier is intended to be used in high frequency miniature switched mode power supplies. It is also an ideal candidate for auxiliary power supply in telecom, server, or smart metering. ST trench rectifiers are adapted to freewheeling, OR-ring or reverse polarity protection applications, and can be the perfect companion device to our transistors, drivers, or ST VIPer products. |
STPST8100 V, 8 A Power Schottky Trench Rectifier | Discrete Semiconductor Products | 2 | Active | This 8 A, 100 V rectifier is based on ST trench technology that achieves the best-in-class VF/IR trade-off for a given silicon surface.
Integrated in flat and space-saving packages, this STPST8H100-Y trench, and automotive-graded device is intended to be used in high frequency miniature switched mode power supplies such as in automotive, DC/DC converters or ECU power supply. It is also adapted to freewheeling applications, OR-ring, or reverse polarity protection. |
| RF and Wireless | 8 | Obsolete | |
STPW12Programmable electronic power breaker for 12V bus | Current Regulation/Management | 1 | Active | The STPW12 is an integrated electronic power breaker, optimized to monitor the input power.
Connected in series to the power rail, it is able to disconnect the electronic circuitry on its output if the power consumption overcomes the programmed limit. When this happens, the device automatically opens the integrated power switch and disconnects the load.
The intervention of the protection is communicated to the board monitoring circuits through a signal on the fault pin.
After a certain delay time, programmable by the user, the device automatically tries again to close the internal switch and re-connect the load.
A dedicated monitor pin provides the user with continuous information on the monitored power.
The device can be enabled/disabled through a dedicated pin, and a direct PWM mode can be implemented providing PWM pin with an external signal. |
STQ1HNK60RN-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH PowerMOSFET in TO-92 package | FETs, MOSFETs | 1 | Active | These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. |
STQ1NK60ZRN-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package | FETs, MOSFETs | 1 | Active | These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STQ1NK80ZR-APN-channel 800 V, 13 Ohm typ., 250 mA SuperMESH Power MOSFET in a TO-92 package | FETs, MOSFETs | 1 | Active | These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. |
| Transistors | 1 | Obsolete | |
STQ2HNK60ZR-APN-channel 600 V, 3.5 Ohm typ., 500 mA SuperMESH Power MOSFET in a TO-92 package | Discrete Semiconductor Products | 1 | Active | These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. |
