STFU15N-channel 800 V, 300 mOhm typ., 14 A MDmesh K5 Power MOSFET in TO-220FP ultra narrow leads package | Single | 2 | Active | This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
| Discrete Semiconductor Products | 1 | Obsolete | |
STFU18N60M2N-channel 600 V, 255 mOhm typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package | FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
STFU18N65M2N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package | Single FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
STFU23N80K5N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in a TO-220FP ultra narrow leads package | FETs, MOSFETs | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STFU24N60M2N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP ultra narrow leads package | Single FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
STFU25N60M2-EPN-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP ultra narrow leads package | FETs, MOSFETs | 1 | Obsolete | This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching losses, rendering it suitable for the most demanding very high frequency converters. |
STFU26N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package | Discrete Semiconductor Products | 1 | Active | This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
STFU28N65M2N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220FP ultra narrow leads package | Single FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
| Discrete Semiconductor Products | 1 | Obsolete | |
