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STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
Beta
⌘K
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
 STMicroelectronics STEVAL-ISA068V1Obsolete | Development Boards Kits Programmers | EVAL BOARD FOR ST1S32 |
 STMicroelectronics 74VCXHQ163245TTRObsolete | Integrated Circuits (ICs) | IC TRANSLATION TXRX 2.7V 48TSSOP |
 STMicroelectronics | Development Boards Kits Programmers | VNQ9050LAJ EVALUATION BOARD |
 STMicroelectronics LSM303DLHCTRObsolete | Sensors Transducers | IMU ACCEL/MAG 3-AXIS I2C 14LGA |
 STMicroelectronics M93C56-WMN6TObsolete | Integrated Circuits (ICs) | EEPROM SERIAL-MICROWIRE 2K-BIT 256 X 8/128 X 16 3.3V/5V 8-PIN SO N T/R |
STMicroelectronics | Integrated Circuits (ICs) | STM32U |
 STMicroelectronics TS831-3IZObsolete | Integrated Circuits (ICs) | IC SUPERVISOR 1 CHANNEL TO92-3 |
 STMicroelectronics STMPE1208SQTRObsolete | Integrated Circuits (ICs) | IC I/O EXPANDER I2C 12B 40QFN |
 STMicroelectronics STM32L1-MAGNETObsolete | Development Boards Kits Programmers | IAR EXPERIMENT STM32 L1 EVAL BRD |
 STMicroelectronics VNB35N07Obsolete | Integrated Circuits (ICs) | IC PWR DRIVER N-CHAN 1:1 D2PAK |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STF6N95K5N-channel 950 V, 1 Ohm typ., 9 A MDmesh K5 Power MOSFET in TO-220FP package | FETs, MOSFETs | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency |
STF7N-channel 950 V, 1.1 Ω, 7.2 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH3͐2;2; Power MOSFET | Single | 6 | Active | The new SuperMESH3 series is obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESH layout with a new optimized vertical structure. In addition to pushing on-resistance significantly down, special attention has been taken to ensure a very good dynamic performances coupled with a very large avalanche capability for the most demanding application. |
STF7LN80K5N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSFET in a TO-220FP package | Single FETs, MOSFETs | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
| Discrete Semiconductor Products | 2 | Obsolete | ||
| Transistors | 1 | Obsolete | ||
STF7N60M2N-channel 600 V, 0.86 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220FP package | Single FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
STF7NM60NN-channel 600 V, 0.8 Ohm typ., 5 A MDmesh II Power MOSFET in TO-220FP package | Transistors | 1 | Active | This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
STF7NM80N-channel 800 V, 0.95 Ohm typ., 6.5 A MDmesh Power MOSFET in a TO-220FP package | Single FETs, MOSFETs | 1 | Active | This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low on-resistance, high dv/dt, and excellent avalanche characteristics. Using STMicroelectronics's proprietary strip technique, this Power MOSFET boasts an overall dynamic performance that is superior to similar products on the market. |
STF8N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP package | Discrete Semiconductor Products | 5 | Active | This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
| Transistors | 1 | Obsolete | ||