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STMicroelectronics

Series	Category	# Parts	Status	Description

Part	Spec A	Spec B	Spec C	Spec D	Description

Standalone parts(7415)

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Part	Category	Description
STMicroelectronics STEVAL-ISA068V1Obsolete	Development Boards Kits Programmers	EVAL BOARD FOR ST1S32
STMicroelectronics 74VCXHQ163245TTRObsolete	Integrated Circuits (ICs)	IC TRANSLATION TXRX 2.7V 48TSSOP
STMicroelectronics EV-VNQ9050LAJ	Development Boards Kits Programmers	VNQ9050LAJ EVALUATION BOARD
STMicroelectronics LSM303DLHCTRObsolete	Sensors Transducers	IMU ACCEL/MAG 3-AXIS I2C 14LGA
STMicroelectronics M93C56-WMN6TObsolete	Integrated Circuits (ICs)	EEPROM SERIAL-MICROWIRE 2K-BIT 256 X 8/128 X 16 3.3V/5V 8-PIN SO N T/R
STMicroelectronics STM32U375CGT6	Integrated Circuits (ICs)	STM32U
STMicroelectronics TS831-3IZObsolete	Integrated Circuits (ICs)	IC SUPERVISOR 1 CHANNEL TO92-3
STMicroelectronics STMPE1208SQTRObsolete	Integrated Circuits (ICs)	IC I/O EXPANDER I2C 12B 40QFN
STMicroelectronics STM32L1-MAGNETObsolete	Development Boards Kits Programmers	IAR EXPERIMENT STM32 L1 EVAL BRD
STMicroelectronics VNB35N07Obsolete	Integrated Circuits (ICs)	IC PWR DRIVER N-CHAN 1:1 D2PAK

Series	Category	# Parts	Status	Description

STF5N80K5N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a TO-220FP package	Transistors	1	Active	This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
STF5N95	Discrete Semiconductor Products	1	Active
STF5N95K5	Discrete Semiconductor Products	1	Active
STF5NK100N-channel 1000 V, 2.7 Ohm typ., 3.5 A SuperMESH Power MOSFET in a TO-220FP package	Transistors	1	Active	The new SuperMESH series of Power MOSFETS is the result of further design improvements on ST's well-established stripbased PowerMESH layout. In addition to significantly lower on-resistance, the device offers superior dv/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH devices further complement an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh products.
STF6N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in TO-220FP package	Single	3	Active	These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
STF60N	FETs, MOSFETs	1	Obsolete
STF6N65K3N-channel 650 V, 1.1 Ohm typ., 5.4 A SuperMESH3(TM) Power MOSFET in TO-220FP package	Discrete Semiconductor Products	1	Active	These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
STF6N65M2	Transistors	1	Obsolete
STF6N80K5N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in a TO-220FP package	FETs, MOSFETs	1	Active	These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
STF6N90K5N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-220FP package	FETs, MOSFETs	1	Active	This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.