STF3N80K5N-channel 800 V, 2.8 Ohm typ., 2.5 A MDmesh K5 Power MOSFET in TO-220FP package | Single FETs, MOSFETs | 1 | Active | This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
STF3NK100ZN-channel 1000 V, 5.4 Ohm typ., 2.5 A SuperMESH Power MOSFET in a TO-220FP package | Single FETs, MOSFETs | 1 | Active | This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STF3NK80ZN-channel 800 V, 3.6 Ohm typ., 2.5 A SuperMESH Power MOSFET in a TO-220FP package | Transistors | 1 | Active | This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STF40N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-220FP package | Single FETs, MOSFETs | 2 | Active | These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics,rendering them suitable for the most demanding high efficiency converters. |
STF40N65M2N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220FP package | Transistors | 1 | Active | This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
STF40NF20N-channel 200V - 0.038Ohm -40A- D2PAK/TO-220/TO-220FP/TO-247 | Transistors | 1 | Active | This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. |
| Transistors | 1 | Active | |
STF42N65M5N-channel 650 V, 70 mOhm typ., 33 A MDmesh M5 Power MOSFET in a TO-220FP package | Discrete Semiconductor Products | 1 | Active | MDmesh V is a revolutionary Power MOSFET technology based on an innovative proprietary vertical process, which is combined with STMicroelectronics well-known PowerMESH horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiencies. |
| Single FETs, MOSFETs | 1 | Active | |
STF45N65M5N-channel 650 V, 0.067 Ohm typ., 35 A MDmesh M5 Power MOSFET in TO-220FP package | FETs, MOSFETs | 1 | Active | These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. |
