STB12NN-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in D2PAK package | Discrete Semiconductor Products | 4 | Active | These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market. |
STB12N60DM2AGAutomotive-grade N-channel 600 V, 380 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a D2PAK package | FETs, MOSFETs | 1 | Active | This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. |
STB13N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in D2PAK package | Single FETs, MOSFETs | 1 | Active | These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. |
| Discrete Semiconductor Products | 1 | Obsolete | |
STB13007DT4High voltage fast-switching NPN power transistor | Single Bipolar Transistors | 1 | Active | The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure to enhance switching speeds. |
STB130N6F7N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in D2PAK package | Transistors | 1 | Active | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
| Discrete Semiconductor Products | 1 | Obsolete | |
STB13N60M2N-channel 600 V, 350 mOhm typ., 11 A MDmesh M2 Power MOSFET in a D2PAK package | Discrete Semiconductor Products | 1 | Active | This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. |
STB13NK60ZT4N-channel 600 V, 0.48 Ohm typ., 13 A SuperMesh Power MOSFET in D2PAK package | Single FETs, MOSFETs | 1 | Active | The SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. |
STB13NM60NN-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in a D2PAK package | FETs, MOSFETs | 1 | Active | These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
