STB13N80K5 Series
N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in D2PAK package
Manufacturer: STMicroelectronics
Catalog
N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in D2PAK package
| Part | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Vgs (Max) | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Technology | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | 5 V | 30 V | 800 V | -55 °C | 150 °C | Surface Mount | TO-263 (D2PAK) | 29 nC | MOSFET (Metal Oxide) | 870 pF | N-Channel | 12 A | 450 mOhm | 190 W |
Description
AI
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.