MD1803DFXHigh voltage npn power transistor for standard definition CRT display | Discrete Semiconductor Products | 1 | Obsolete | The MD1803DFX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. |
MD2001FXHigh voltage NPN power transistor for standard definition CRT display | Bipolar (BJT) | 1 | Active | The MD2001FX is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. |
| Transistors | 1 | Obsolete | |
MDmesh M9N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET in a TO247-4 package | FETs, MOSFETs | 2 | Active | This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on)per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency. |
MIS2DH3-axis accelerometer for medical/healthcare applications, ±2g/±4g/±8g/±16g user selectable full-scale | Sensors, Transducers | 1 | Active | The MIS2DH is an ultra-low-power high-performance three-axis linear accelerometer with digital I2C/SPI serial interface standard output.
The MIS2DH has user-selectable full scales of ±2g/±4g/±8g/±16g and is capable of measuring accelerations with output data rates from 1 Hz to 5.3 kHz.
The MIS2DH is a device that has been conceived for medical and healthcare applications whenever the sensor itself is not used as a life-sustaining component.
The device may be configured to generate interrupt signals by two independent inertial wake-up/free-fall events as well as by the position of the device itself.
The self-test capability allows the user to check the functionality of the sensor in the final application.
The MIS2DH is available in a small thin plastic land grid array package (LGA) and is guaranteed to operate over an extended temperature range from -40 °C to +85 °C. |
| Single Bipolar Transistors | 1 | Obsolete | |
MJB44Automotive-grade low voltage NPN power transistor | Single Bipolar Transistors | 1 | Active | This device is an NPN transistor manufactured using new low voltage planar technology with double metal process. The result is a transistor which boasts exceptionally high gain performance coupled with very low saturation voltage. |
| Single Bipolar Transistors | 1 | Active | |
MJD117Low voltage PNP power Darlington transistor | Discrete Semiconductor Products | 1 | Active | The devices are manufactured in planar technology with "base island" layout and monolithic Darlington configuration. |
| Discrete Semiconductor Products | 2 | Active | |
