Catalog
Low voltage PNP power Darlington transistor
Description
AI
The devices are manufactured in planar technology with "base island" layout and monolithic Darlington configuration.
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Low voltage PNP power Darlington transistor
Low voltage PNP power Darlington transistor
| Part | Supplier Device Package | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) [Max] | Operating Temperature | Transistor Type | Mounting Type | Current - Collector (Ic) (Max) [Max] | Package / Case | Power - Max [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Frequency - Transition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 STMicroelectronics | DPAK | 1000 | 3 V | 20 µA | 150 °C | PNP - Darlington | Surface Mount | 2 A | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 20 W | 100 V | 25 MHz |