STD16N50M2N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh M6 Power MOSFET in a DPAK package | Single | 4 | Active | The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. |
STD17NF25N-channel 250 V, 140 mOhm typ., 17 A STripFET II Power MOSFET in a DPAK package | Transistors | 2 | Active | This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. |
STD18N55M5N-channel 550 V, 0.150 Ohm typ., 16 A MDmesh M5 Power MOSFET in DPAK package | Bipolar (BJT) | 2 | Active | This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. |
| Single FETs, MOSFETs | 1 | Obsolete | |
STD1HN60K3N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in DPAK package | Single FETs, MOSFETs | 1 | Active | These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. |
STD1NK60T4N-channel 600 V, 7.3 Ohm typ., 1 A SuperMESH Power MOSFET in DPAK package | Transistors | 1 | Active | This high voltage device is an N-channel Power MOSFET developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STD20NF06T4N-channel 60 V, 0.032 Ohm typ., 24 A Power MOSFET in DPAK package | Single FETs, MOSFETs | 1 | Active | This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. |
STD26P3LLH6P-channel 30 V, 0.024 Ohm typ., 12 A, STripFET(TM) VI DeepGATE Power MOSFET in a DPAK package | Single | 2 | Active | This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is intended for any application with low gate charge drive requirements. |
STD2805T4Low voltage fast-switching PNP power transistor | Bipolar (BJT) | 1 | Active | The device is manufactured in PNP planar technology using a "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. |
STD2LN60K3N-channel 600 V, 4 Ohm typ., 2 A, SuperMESH3(TM) Power MOSFET in DPAK package | Discrete Semiconductor Products | 1 | Active | These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. |
