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STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| FETs, MOSFETs | 1 | Obsolete | ||
STD10N60DM2P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in DPAK package | Single | 6 | Active | The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. |
STD110N8F6N-channel 80 V, 0.0056 Ohm typ., 110 A, STripFET F6 Power MOSFET in a DPAK package | Single FETs, MOSFETs | 1 | Active | This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. |
STD11N50M2N-channel 600 V, 500 mOhm typ., 8 A MDmesh M6 Power MOSFET in a DPAK package | Single FETs, MOSFETs | 4 | Active | The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. |
STD12NF06LT4N-channel 500 V, 0.299 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package | Single Bipolar Transistors | 6 | Active | This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. |
STD13003High voltage fast-switching NPN power transistor | Single Bipolar Transistors | 1 | Active | The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.
The device is designed for use in lighting applications and low cost switch-mode power supplies. |
STD134N4F7AGAutomotive-grade N-channel 40 V, 2.5 mOhm typ., 80 A STripFET F7 Power MOSFET in a DPAK package | Transistors | 1 | Active | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
STD13N60M6N-channel 600 V, 320 mOhm typ., 10 A MDmesh M6 Power MOSFET in a DPAK package | Discrete Semiconductor Products | 2 | Active | The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on)per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. |
| FETs, MOSFETs | 1 | Obsolete | ||
STD15N65M5N-channel 650 V, 0.308 Ohm typ., 11 A MDmesh M5 Power MOSFET in DPAK package | Single | 2 | Active | This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency. |
| Part | Category | Description |
|---|---|---|
STMicroelectronics EMIF09-SD01F3Obsolete | Filters | FILTER RC(PI) 40 OHM/20PF SMD |
STMicroelectronics | Integrated Circuits (ICs) | STM32 DYNAMIC EFFICIENCY MCU WITH BAM, HIGH-PERFORMANCE AND DSP WITH FPU, ARM CORTEX-M4 MCU WITH 1 MBYTE OF FLASH MEMORY, 100 MHZ CPU, ART ACCELERATOR, DFSDM |
STMicroelectronics | Integrated Circuits (ICs) | 32-BIT POWER ARCHITECTURE MCU FOR AUTOMOTIVE BODY AND GATEWAY APPLICATIONS |
STMicroelectronics | Integrated Circuits (ICs) | MCU 32-BIT E200Z0H RISC 128KB FLASH 3.3V/5V AUTOMOTIVE AEC-Q100 64-PIN LQFP T/R |
STMicroelectronics | Development Boards Kits Programmers | DEMONSTRATION BOARD FOR SINGLE CHANNEL OP-AMP IN SO8 PACKAGE |
STMicroelectronics LDLN025J30RLTB | Integrated Circuits (ICs) | IC REG LINEAR 3V 250MA 4FLIPCHIP |
STMicroelectronics ST25RU3993-EVALObsolete | Development Boards Kits Programmers | ST25RU3993 READER IC EVALUATION BOARD |
STMicroelectronics | Integrated Circuits (ICs) | ARM-BASED 32-BIT MCU+FPU, 84MHZ, 128KB FLASH, 49-PIN WLCSP, -40 TO 85°C T/R |
STMicroelectronics STP12NM60NObsolete | Discrete Semiconductor Products | MOSFET N-CH 600V 10A TO220AB |
STMicroelectronics VND1NV04Obsolete | Integrated Circuits (ICs) | IC PWR DRIVER N-CHANNEL 1:1 DPAK |