STD3NK60Z-1N-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in IPAK package | Single | 1 | NRND | These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. |
STD3NK80ZT4N-channel 800 V, 3.6 Ohm typ., 2.5 A SuperMESH Power MOSFET in a DPAK package | Discrete Semiconductor Products | 1 | Active | This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STD3NM60NN-channel 600 V, 1.6 Ohm, 3.3 A MDmesh(TM) II Power MOSFET in DPAK package | Discrete Semiconductor Products | 1 | Active | This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
STD40P8F6AGAutomotive-grade P-channel -80 V, 18.5 mOhm typ., -40 A STripFET F6 Power MOSFET in a DPAK package | Single FETs, MOSFETs | 3 | Active | This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. |
STD45N10F7N-channel 100 V, 14.5mOhm typ., 45 A, STripFET F7 Power MOSFETs in DPAK, I2PAK and TO-220 packages | FETs, MOSFETs | 1 | Active | These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
| Discrete Semiconductor Products | 1 | Obsolete | |
STD47N10F7AGAutomotive-grade N-channel 100 V, 0.0125 Ohm typ., 45 A STripFET F7 Power MOSFET in DPAK package | Transistors | 1 | Active | This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. |
| Single | 4 | Active | |
STD4N52K3N-channel 525 V, 2.5 A, 2.1 Ohm typ., SuperMESH3(TM) Power MOSFET in DPAK package | Transistors | 1 | Active | These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. |
STD4N62K3N-channel 620 V, 1.7 Ohm typ., 3.8 A, MDmesh K3 Power MOSFET in a DPAK package | Transistors | 1 | Active | This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. |
