STMicroelectronics

The PWD5F60 is an advanced power system-in package integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration. The integrated power MOSFETs have RDS(ON)of 1.38 Ω and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows to efficiently drive loads in a tiny space. The PWD5F60 accepts a supply voltage (VCC) extending over a wide range (10 V to 20 V) and also features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions. The input pins extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors. The PWD5F60 embeds two uncommitted comparators available for protections against overcurrent, overtemperature, etc. The PWD5F60 operates in the industrial temperature range, -40 °C to 125 °C. The device is available in a compact VFQFPN package.

The PWD5T60 is a is a three-phase high-density power driver integrating gate driver and six N-channel power MOSFETs. The PWD5T60 is the optimal solution for motor drive applications such as fans, pumps and small appliances. The integrated power MOSFETs have RDS(on) of 1.38 Ω and 500 V blocking voltage. The high integration of the device allows to efficiently drive loads with reduced footprint, making PWD5T60 the optimal solution for space constrained applications. The device has dedicated input pins for each output and a shutdown pin. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing with control devices. Matched delays between low-side and high-side sections guarantee no cycle distortion and allow high-frequency operation. Robustness is a distinctive factor of PWD5T60. Prevention from cross conduction is ensured by interlocking and deadtime functions and a comparator featuring advanced smart ShutDown function ensures fast and effective protection against overload and overcurrent. The dedicated UVLO protections on both low-side and high-side prevent the power switches from operating in low efficiency or dangerous conditions, enabling optimal and fail-safe operation. The zero-drop integrated bootstrap diodes as well as all of the embedded features enable the design of compact and simple PCB layout, and reduce the overall bill of material and application cost. The device is available in a compact VFQFPN 12x12x0.95 mm.

The RF2L16080CF2 is a 80 W, 28 V input matched LDMOS FETs, designed for global positioning system and communication/ISM applications with frequencies from 1300 to 1700 MHz. It can be used in class AB, B or C for all typical modulation formats.

The RF2L27025CG2 is a 15 W, 28 V, internally matched LDMOS transistor, designed for Telecom, wideband communications and ISM applications in the frequency range from 0.7 to 2.7 GHz. It can be used in class AB, B or C for all typical modulation formats.

The RF2L42008CG2 is a 8 W, 28 V, internally matched LDMOS FET, designed for global positioning system, wideband communications and ISM applications in the frequency range from 0.7 to 4.2 GHz. It can be used in class AB, B or C for all typical modulation formats.