Renesas Electronics Corporation

The HIP6521 provides the power control and protection for four output voltages in high-performance microprocessor and computer applications. The IC integrates a voltage-mode PWM controller and three linear controllers, as well as monitoring and protection functions into a 16 Ld SOIC package. The PWM controller is intended to regulate the microprocessor memory core voltage with a synchronous-rectified buck converter. The linear controllers are intended to regulate the computer system's AGP 1. 5V bus power, the 2. 5V clock power, and the 1. 8V power for the North/South Bridge core voltage and/or cache memory circuits. Both the switching regulator and linear voltage references provide ±2% of static regulation over line, load, and temperature ranges. All outputs are user-adjustable by means of an external resistor divider. All linear controllers employ bipolar NPNs for the pass transistors. The HIP6521 monitors all the output voltages. The PWM controller's adjustable overcurrent function monitors the output current by using the voltage drop across the upper MOSFET's rDS(ON). The linear regulator outputs are monitored via the FB pins for undervoltage events.

The HIP6601B, HIP6603B and HIP6604B are high-frequency, dual MOSFET drivers specifically designed to drive two power N-Channel MOSFETs in a synchronous rectified buck converter topology. These drivers combined with a HIP63xx or the ISL65xx series of Multi-Phase Buck PWM controllers and MOSFETs form a complete core-voltage regulator solution for advanced microprocessors. The HIP6601B drives the lower gate in a synchronous rectifier to 12V, while the upper gate can be independently driven over a range from 5V to 12V. The HIP6603B drives both upper and lower gates over a range of 5V to 12V. This drive-voltage flexibility provides the advantage of optimizing applications involving trade-offs between switching losses and conduction losses. The HIP6604B can be configured as either a HIP6601B or a HIP6603B. The output drivers in the HIP6601B, HIP6603B and HIP6604B have the capacity to efficiently switch power MOSFETs at frequencies up to 2MHz. Each driver is capable of driving a 3000pF load with a 30ns propagation delay and 50ns transition time. These products implement bootstrapping on the upper gate with only an external capacitor required. This reduces implementation complexity and allows the use of higher performance, cost effective, N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously.

The HM-6551/883 is a 256 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous circuit design techniques are employed to achieve high performance and low power operation. On chip latches are provided for address and data outputs allowing efficient interfacing with microprocessor systems. The data output buffers can be forced to a high impedance state for use in expanded memory arrays. The HM-6551/883 is a fully static RAM and may be maintained in any state for an indefinite period of time. Data retention supply voltage and supply current are guaranteed over temperature.