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ON Semiconductor

Series List(12147)

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Series	Category	# Parts	Status	Description

Standalone parts(10272)

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Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V

Series	Category	# Parts	Status	Description

NDS9952ADual N & P-Channel Enhancement Mode Field Effect Transistor 30V	Transistors	4	Obsolete	These dual N- and P-channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDSH30120C-F155Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-2L	Rectifiers	1	Active	Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
NDSH30120CDNSilicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D3, TO-247-3L	Diode Arrays	1	Active	Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
NDSH40120C-F155Silicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D3, TO-247-2L	Rectifiers	1	Active	Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
NDSH50120CSilicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L	Single Diodes	1	Active	Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
NDSH50120C-F155Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L	Diodes	1	Active	Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
NDT014N-Channel Enhancement Mode Field Effect Transistor 60V, 2.7A, 0.2Ω	FETs, MOSFETs	1	Active	Power SOT N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
NDT02N40Power MOSFET 400V 0.4A 5.5 Ohm Single N-Channel SOT-223	Single FETs, MOSFETs	1	Obsolete	Power MOSFET 400V 5.5 Ohm Single N-Channel
NDT03N40ZN-Channel Power MOSFET, 400 V, 3.4 OHM	Transistors	1	Obsolete	N-Channel Power MOSFET, 400 V, 3.4 OHM
NDT451ANN-Channel Enhancement Mode Field Effect Transistor 30V, 7.2A, 35mΩ	Single	3	Active	Power SOT N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.