NDT451AN Series

N-Channel Enhancement Mode Field Effect Transistor 30V, 7.2A, 35mΩ

Catalog

N-Channel Enhancement Mode Field Effect Transistor 30V, 7.2A, 35mΩ

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Max]	Operating Temperature [Min]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor NDT451N	5.5 A	25 nC	50 mOhm	SOT-223-4	MOSFET (Metal Oxide)	TO-261-4 TO-261AA	Surface Mount	30 V	N-Channel	3 V	730 pF
ON Semiconductor NDT451AN_J23Z	7.2 A		35 mOhm	SOT-23-3	MOSFET (Metal Oxide)	SC-59 SOT-23-3 TO-236-3	Surface Mount	30 V	N-Channel	3 V	720 pF	150 °C	-65 °C	4.5 V 10 V	20 V	3 W	30 nC
ON Semiconductor NDT451AN	7.2 A		35 mOhm	SOT-223-4	MOSFET (Metal Oxide)	TO-261-4 TO-261AA	Surface Mount	30 V	N-Channel	3 V	720 pF	150 °C	-65 °C	4.5 V 10 V	20 V	3 W	30 nC

Catalog

N-Channel Enhancement Mode Field Effect Transistor 30V, 7.2A, 35mΩ

Key Features

• 7.2A, 30VRDS(ON)= 0.035Ω @ VGS= 10VRDS(ON)= 0.05Ω @ VGS= 4.5V

• High density cell design for extremely low RDS(ON)

• High power and current handling capability in a widely used surface mount package

Description

Power SOT N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.