NDT014 Series

N-Channel Enhancement Mode Field Effect Transistor 60V, 2.7A, 0.2Ω

Catalog

N-Channel Enhancement Mode Field Effect Transistor 60V, 2.7A, 0.2Ω

Part	Vgs(th) (Max) @ Id	FET Type	Technology	Supplier Device Package	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type
ON Semiconductor NDT014	4 V	N-Channel	MOSFET (Metal Oxide)	SOT-223-4	20 V	TO-261-4 TO-261AA	10 V	2.7 A	155 pF	3 W	60 V	150 °C	-65 °C	200 mOhm	11 nC	Surface Mount

Catalog

N-Channel Enhancement Mode Field Effect Transistor 60V, 2.7A, 0.2Ω

Key Features

• 2.7 A, 60 V. RDS(ON)= 0.2 Ω @ VGS= 10V

• High density cell design for extremely lowRDS(ON).

• High power and current handling capability in a widely used surface mount package.

Description

Power SOT N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.