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ON Semiconductor
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
Beta
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| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
 ON Semiconductor | Integrated Circuits (ICs) | SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL |
 ON Semiconductor 74AC32PCObsolete | Integrated Circuits (ICs) | IC GATE OR 4CH 2-INP 14MDIP |
 ON Semiconductor | Discrete Semiconductor Products | IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION |
 ON Semiconductor FAN1655MTFXObsolete | Integrated Circuits (ICs) | IC REG CTRLR DDR 1OUT 16TSSOP |
 ON Semiconductor FIN1027MObsolete | Integrated Circuits (ICs) | LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC |
 ON Semiconductor | Integrated Circuits (ICs) | PIPELINE REGISTER, 8-BIT PQCC28 |
ON Semiconductor SLV4HC4053ADWRGObsolete | Integrated Circuits (ICs) | LDO REGULATOR, ULTRA-LOW NOISE, |
 ON Semiconductor | Isolators | OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES |
 ON Semiconductor NVMFD5483NLT1GObsolete | Discrete Semiconductor Products | DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ |
ON Semiconductor | Discrete Semiconductor Products | BIP NPN 8A 50V |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Single, Pre-Biased | 1 | Obsolete | ||
| Single Bipolar Transistors | 1 | Obsolete | ||
| Transistors | 2 | Obsolete | ||
FJP13007NPN Silicon Transistor | Single Bipolar Transistors | 4 | Obsolete | NPN Silicon Transistor |
FJP13009High-Voltage Fast-Switching NPN Power Transistor | Single | 3 | Active | The FJP13009 is a 700 V, 12 A NPN silicon epitaxial planar transistor. The FJP13009 is available with multiple hFEbin classes for ease of design use. The FJP13009 is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent power dissipation. |
FJP2145ESBC Rated NPN Power Transistor | Discrete Semiconductor Products | 1 | Obsolete | The FJP2145 is a low-cost, high-performance power switch designed to provide the best performance when used in an ESBC configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1100 volts and up to 5 amps, while providing exceptionally low on-resistance and very low switching losses. The ESBC switch can be driven using off-the-shelf power supply controllers or drivers. The ESBC MOSFET is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. The ESBC configuration further minimizes the required driving power because it does not have Miller capacitance. The FJP2145 provides exceptional reliability and a large operating range due to its square reverse-bias-safe-operating-area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures. The power switch is manufactured using a dedicated high-voltage bipolar process and is packaged in a high voltage TO-220 package. |
FJP2160DESBC Rated NPN Silicon Transistor | Discrete Semiconductor Products | 1 | Obsolete | The FJP2160D is a low-cost, high performance power switch designed to provide the best performance when used in an ESBC configuration in applications such as: power supplies, motor drivers, Smart Grid, or ignition switches. The power switch is designed to operate up to 1600 volts and up to 3amps while providing exceptionally low on-resistance and very low switching losses.The ESBC switch is designed to be easy to drive using off-the-shelf power supply controllers or drivers. The ESBC MOSFET is a low-voltage, low-cost, surface mount device that combines low-input capacitance and fast switching, The ESBC configuration further minimizes the required driving power because it does not have Miller capacitance.The FJP2160D provides exceptional reliability and a large operating range due to its square reverse-bias-safeoperating-area (RBSOA) and rugged design. The device is avalanche rated and has no parasitic transistors; it is not prone to static dv/dt failures. |
| Transistors | 2 | Obsolete | ||
FJP3307DHigh Voltage Fast Switching NPN Power Transistor | Transistors | 4 | Active | The FJP3307D is a 700 V 8 A NPN Silicon Epitaxial Planar Transistor. The FJP3307D is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent Power Dissipation. |
| Single | 5 | Obsolete | ||