NTMFS3D2N10MD Series

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 142A, 3.2mΩ

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 142A, 3.2mΩ

Part	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology	Vgs (Max)	Supplier Device Package	Supplier Device Package	Package / Case
ON Semiconductor NTMFS3D2N10MDT1G	100 V	3900 pF	3.5 mOhm	N-Channel	2.8 W 155 W	6 V 10 V	4 V	71.3 nC	19 A 142 A	-55 °C	150 °C	Surface Mount	MOSFET (Metal Oxide)	20 V	5-DFN (5x6)	8-SOFL	8-PowerTDFN 5 Leads

Catalog

N-Channel Shielded Gate PowerTrench® MOSFET 100V, 142A, 3.2mΩ

Key Features

• Shielded Gate MOSFET Technology

• Max rDS(on)= 3.5 mΩ at VGS= 10 V, ID= 50 A

• Max rDS(on)= 5.8 mΩ at VGS= 6 V, ID= 30.5 A

• 50% lower Qrrthan other MOSFET suppliers

• Lowers switching noise/EMI

• MSL1 robust package design

• 100% UIL tested

• RoHS Compliant

• Very Low RDS*Qoss

Description

This N-Channel MV MOSFET is produced using an advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimise on-state resistance and yet maintain superior switching performance with very low Qg and Qoss.