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ON Semiconductor

Series List(12147)

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Series	Category	# Parts	Status	Description

Standalone parts(10272)

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Part	Category	Description
ON Semiconductor NCV8402AMNWT1G	Integrated Circuits (ICs)	SELF-PROTECTED N-CHANNEL POWER MOSFET/ REEL
ON Semiconductor 74AC32PCObsolete	Integrated Circuits (ICs)	IC GATE OR 4CH 2-INP 14MDIP
ON Semiconductor FGI3236-F085	Discrete Semiconductor Products	IGBT, 360V, 27A, 1.32V, 320MJ, TO-262<BR>ECOSPARK® I, N-CHANNEL IGNITION
ON Semiconductor FAN1655MTFXObsolete	Integrated Circuits (ICs)	IC REG CTRLR DDR 1OUT 16TSSOP
ON Semiconductor FIN1027MObsolete	Integrated Circuits (ICs)	LVDS DRIVER, LVDS DIFFERENTIAL DRIVER, -40 °C, 85 °C, 3 V, 3.6 V, SOIC
ON Semiconductor TMC2111AR3C	Integrated Circuits (ICs)	PIPELINE REGISTER, 8-BIT PQCC28
ON Semiconductor SLV4HC4053ADWRGObsolete	Integrated Circuits (ICs)	LDO REGULATOR, ULTRA-LOW NOISE,
ON Semiconductor FOD4218V	Isolators	OPTOCOUPLER, DIP, 6 PINS, 5 KV, NON ZERO CROSSING, 800 V, FOD4218 SERIES
ON Semiconductor NVMFD5483NLT1GObsolete	Discrete Semiconductor Products	DUAL N-CHANNEL POWER MOSFET 60V, 24A, 36MΩ
ON Semiconductor 2SD1804S-TL-E	Discrete Semiconductor Products	BIP NPN 8A 50V

Series	Category	# Parts	Status	Description

NSVF3007SG3RF Transistor for Low Noise Amplifier	Transistors	1	Obsolete	This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications.
NSVF4015SG4RF Transistor for Low Noise Amplifier	Discrete Semiconductor Products	1	Active	This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications.
NSVF4017SG4RF Transistor for Low Noise Amplifier	Bipolar (BJT)	1	Obsolete	This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications.
NSVF6003SB6RF Transistor, NPN Single, 12 V, 150 mA, f<sub>T</sub> = 7 GHz	RF	1	Active	This RF transistor is designed for low noise amplifier applications. CPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications.
NSVG3117SG6MMIC Wideband Amplifier, 5 V, 22.7 mA, 0.1 to 3 GHz, MCPH6	RF Amplifiers	1	Active	This product is Monolithic Microwave Integrated Circuit(MMIC). This is wideband amplifier up to 3GHz. It has flat and high gain characteristics. It is designed with 50 Ω matching. It contribute to reduce parts and PCB mount area.
NSVJ2394SA3N-Channel JFET, 15 V, 10 to 32 mA, 38 mS	JFETs	1	Active	The NSVJ2394SA3 is a Single N-Channel Junction FET featuring Low Noise Amplification (LNA) suitable for automotive antenna applications. This device features high forward transfer admittance with low noise characteristics and provides high ESD immunity in comparison to current JFETs. This device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
NSVJ3910SB3N-Channel JFET, -25 V, 20 to 40 mA, 40 mS	Discrete Semiconductor Products	1	Active	The NSVJ3910SB3 is a Single N-Channel Junction FET featuring Low Noise Amplification (LNA) suitable for automotive antenna applications. This device features high forward transfer admittance with low noise characteristics and provides high ESD immunity in comparison to current JFETs. This device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
NSVJ5908DSG5N-Channel JFET, -15 V, 10 to 32 mA, 35 mS, Dual	JFETs	1	Active	Automotive JFET designed for compact and efficient designs and including high gain performance. AEC-Q101 qualified JFET and PPAP capable suitable for automotive applications.
NSVJ6904DSB6N-Channel JFET, -25 V, 20 to 40 mA, 40 mS, Dual	JFETs	1	Active	The NSVJ6904DSB6 is a composite type of JFET designed for compact size and high efficiency which can achieve high gain performance. This AEC-Q101 qualified and PPAP capable device is suited for automotive applications.
NSVMBD54200 mA, 30 V, Dual Schottky Diode	Diodes	1	Active	The Schottky diode is designed for high speed switching applications, circuit protection and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is ideal for hand held and portable applications where space is limited.