NSVF6003SB6 Series

RF Transistor, NPN Single, 12 V, 150 mA, fT = 7 GHz

Catalog

RF Transistor, NPN Single, 12 V, 150 mA, fT = 7 GHz

Part	Noise Figure (dB Typ @ f)	Voltage - Collector Emitter Breakdown (Max)	Grade	Transistor Type	Frequency - Transition	Supplier Device Package	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Qualification	Current - Collector (Ic) (Max) [Max]	Gain	Mounting Type
ON Semiconductor NSVF6003SB6T1G	3 dB	12 V	Automotive	NPN	7 GHz	6-CPH	800 mW	-55 °C	150 °C	SOT-23-6 Thin TSOT-23-6	AEC-Q101	150 mA	9 dBi	Surface Mount

Catalog

RF Transistor, NPN Single, 12 V, 150 mA, fT = 7 GHz

Key Features

• AEC-Q101 qualified and PPAP capable

• Pb-Free, Halogen Free and RoHS compliance

• High Current (IC = 150 mA)

• Ultra miniature and thin 6 pin package

• Large Collector Dissipation (800 mW)

• High Gain (fT = 7 GHz typ)

Description

This RF transistor is designed for low noise amplifier applications. CPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications.