NSVF3007SG3 Series

RF Transistor for Low Noise Amplifier

Catalog

RF Transistor for Low Noise Amplifier

Part	Operating Temperature [Min]	Operating Temperature [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Gain	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Grade	Noise Figure (dB Typ @ f)	Qualification	Supplier Device Package
ON Semiconductor NSVF3007SG3T1G	-55 °C	150 °C	NPN	12 V	Surface Mount	30 mA	350 mW	12 dBi	60	8 GHz	Automotive	1.8 dB	AEC-Q101	SC-70FL/MCPH3

Catalog

RF Transistor for Low Noise Amplifier

Key Features

• Low-noise use : NF = 1.2 dB (typ) [f = 1 GHz]

• High cut-off frequency : fT = 8 GHz (typ) [VCE = 5 V]

• High gain : |S21e|2= 12 dB (typ) [f = 1 GHz]

• AEC-Q101 qualified and PPAP capable

• MCPH3 package is pin-compatible with SC-70FL

• Pb-Free, Halogen Free and RoHS compliance

• Low current operating

Description

This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q101 qualified and PPAP capable for automotive applications.