PSC0665H Series

650 V, 6 A SiC Schottky diode in DPAK R2P

Catalog

650 V, 6 A SiC Schottky diode in DPAK R2P

Part	Current - Reverse Leakage @ Vr	Technology	Speed	Reverse Recovery Time (trr)	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Package / Case	Supplier Device Package	Current - Average Rectified (Io)	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Nexperia USA Inc. PSC0665HJ	180 µA	SiC (Silicon Carbide) Schottky	500 mA	0 ns	Surface Mount	650 V	1.8 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252-2	6 A	225 pF	175 ░C	-55 °C

Catalog

650 V, 6 A SiC Schottky diode in DPAK R2P

Description

Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin DPAK R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QCx VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.