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Nexperia USA Inc.
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
Nexperia USA Inc. | Discrete Semiconductor Products | TRANSISTOR GP BJT NPN 50V 3A 3-PIN SOT-89 T/R |
Nexperia USA Inc. | Discrete Semiconductor Products | PDTD143XT-Q/SOT23/TO-236AB |
Nexperia USA Inc. BAV99/DG/B3,235Obsolete | Discrete Semiconductor Products | DIODE ARRAY GEN PURP 100V 215MA |
Nexperia USA Inc. | Integrated Circuits (ICs) | 74HCS21PW-Q100/SOT402/TSSOP14 |
Nexperia USA Inc. | Discrete Semiconductor Products | SMALL SIGNAL MOSFET FOR MOBILE |
Nexperia USA Inc. LD6836TD/13P,125Obsolete | Integrated Circuits (ICs) | IC REG LINEAR 1.3V 300MA 5-TSOP |
Nexperia USA Inc. 74HC688PW,112Obsolete | Integrated Circuits (ICs) | IC ID COMPARATOR 8BIT 20-TSSOP |
Nexperia USA Inc. | Discrete Semiconductor Products | DIODE ZENER 6.2V 400MW SOD323 |
Nexperia USA Inc. | Discrete Semiconductor Products | SMALL SIGNAL MOSFETS FOR AUTOMOT |
Nexperia USA Inc. 74ALVT16373DGG,512Obsolete | Integrated Circuits (ICs) | IC D-TYPE TRANSP 8:8 48-TSSOP |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Single FETs, MOSFETs | 1 | Active | ||
BUK9Y12N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56 | Transistors | 3 | Active | Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications. |
BUK9Y13-60ELSingle N-channel 60 V, 7.9 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology | Transistors | 1 | Active | Single, logic level, N-channel MOSFET in LFPAK56 using Application specific (ASFET) Enhanced SOA technology. This product has been designed and qualified to AEC-Q101 for use in linear mode in airbag applications. |
BUK9Y14N-channel 80 V,15 mΩ logic level MOSFET in LFPAK56 | FETs, MOSFETs | 2 | Active | Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia's High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. |
BUK9Y15N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56 | FETs, MOSFETs | 2 | Active | Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. |
BUK9Y153-100EN-channel 100 V, 153 mΩ logic level MOSFET in LFPAK56 | Transistors | 1 | Active | Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. |
| Single FETs, MOSFETs | 1 | Active | ||
BUK9Y19-100EN-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56 | FETs, MOSFETs | 1 | Active | Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. |
BUK9Y19-75BN-channel TrenchMOS logic level FET | Transistors | 1 | Active | Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. |
BUK9Y1R9-40HN-channel 40 V, 1.9 mΩ logic level MOSFET in LFPAK56 | Transistors | 1 | Active | Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. |