BUK9Y15 Series

Catalog

BUK9Y15-60E - N-CHANNEL 60 V, 15 MΩ LOGIC LEVEL MOSFET IN LFPAK56@EN-US SOIC 4-PIN

Part	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Qualification	Grade	Package / Case	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Power Dissipation (Max)
Freescale Semiconductor - NXP BUK9Y15-60E,115	LFPAK56 Power-SO8	MOSFET (Metal Oxide)	53 A	N-Channel	2.1 V	Surface Mount	95 W	5 V	-55 °C	175 ░C	10 V	AEC-Q101	Automotive	SC-100 SOT-669	60 V	17.2 nC	13 mOhm	2603 pF
Freescale Semiconductor - NXP BUK9Y15-100E,115	LFPAK56 Power-SO8	MOSFET (Metal Oxide)	69 A	N-Channel	2.1 V	Surface Mount			-55 °C	175 ░C	10 V	AEC-Q101	Automotive	SC-100 SOT-669	100 V		14.7 mOhm	6139 pF	10 V	5 V	195 W