BUK9Y19-100E Series

N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56

Catalog

N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56

Part	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	Vgs (Max)	Vgs(th) (Max) @ Id	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Grade	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)
Nexperia USA Inc. BUK9Y19-100E,115	18 mOhm	56 A	LFPAK56 Power-SO8	MOSFET (Metal Oxide)	10 V	2.1 V	AEC-Q101	39 nC	Surface Mount	5 V	Automotive	5085 pF	175 °C	-55 °C	SC-100 SOT-669	N-Channel	100 V	167 W

Catalog

N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56

Description

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.