Microchip Technology

The MIC4123/4124/4125 family are highly reliable BiCMOS/DMOS buffer/driver/MOSFET gate drivers. They are higher output current versions of the MIC4126/4127/4128, which are improved versions of the MIC4426/4427/4428. All three families are pin-compatible. The MIC4123/4124/4125 drivers are capable of giving reliable service in more demanding electrical environments than their predecessors. They will not latch under any conditions within their power and voltage ratings. They can survive up to 5V of noise spiking, of either polarity, on the ground pin. They can accept, without either damage or logic upset, up to half an amp of reverse current (either polarity) forced back into their outputs. The MIC4123/4124/4125 series drivers are easier to use, more flexible in operation, and more forgiving than other CMOS or bipolar drivers currently available. Their BiCMOS/DMOS construction dissipates minimum power and provides rail-to-rail voltage swings. Primarily intended for driving power MOSFETs, the MIC4123/4124/4125 drivers are suitable for driving otherloads (capacitive, resistive, or inductive) which require low impedance, high peak currents, and fast switching times. Heavily loaded clocklines, coaxial cables, or piezoelectric transducers are some examples. The only known limitation on loading is that total power dissipated in the driver must be kept within the maximum power dissipation limits of the package.

The MIC4126, MIC4127, and MIC4128 family are highly-reliable dual 1.5 A low-side MOSFET gate drivers fabricated on BiCMOS/DMOS process. The devices feature low power consumption and high efficiency. The MIC4126/27/28 translate TTL or CMOS input logic levels to output voltage levels that swing within 25 mV of the positive supply or ground whereas comparable bipolar devices are capable of swinging only to within 1 V of the supply. The MIC4126/7/8 is available in three configurations: dual inverting, dual non-inverting, and complimentary output. The MIC4126/27/28 offer pin-compatible as well as smaller footprint replacements for the MIC4426/27/28 with improved packaging and electrical performance. The MIC4126/27/28 are available in exposed pad, SOIC-8L, and MSOP-8L options. The devices have an input operating range of 4.5 V to 20 V. Primarily intended for driving power MOSFETs, MIC4426/7/8 drivers are suitable for driving other loads (capacitive, resistive, or inductive) which require low-impedance, high peak current, and fast switching time. The devices can withstand up to 500 mA of reverse current (either polarity) without latching and up to 5 V noise spikes (either polarity) on ground pins.

The MIC4126, MIC4127, and MIC4128 family are highly-reliable dual 1.5 A low-side MOSFET gate drivers fabricated on BiCMOS/DMOS process. The devices feature low power consumption and high efficiency. The MIC4126/27/28 translate TTL or CMOS input logic levels to output voltage levels that swing within 25 mV of the positive supply or ground whereas comparable bipolar devices are capable of swinging only to within 1 V of the supply. The MIC4126/7/8 is available in three configurations: dual inverting, dual non-inverting, and complimentary output. The MIC4126/27/28 offer pin-compatible as well as smaller footprint replacements for the MIC4426/27/28 with improved packaging and electrical performance. The MIC4126/27/28 are available in exposed pad, SOIC-8L, and MSOP-8L options. The devices have an input operating range of 4.5 V to 20 V. Primarily intended for driving power MOSFETs, MIC4426/7/8 gate drivers are suitable for driving other loads (capacitive, resistive, or inductive) which require low-impedance, high peak current, and fast switching time. The devices can withstand up to 500 mA of reverse current (either polarity) without latching and up to 5 V noise spikes (either polarity) on ground pins.

MIC4120 and MIC4129 MOSFET gate drivers are tough, efficient, and easy to use. The MIC4129 is an inverting driver, while the MIC4120 is a non-inverting driver. The MIC4120 and MIC4129 are improved versions of the MIC4420 and MIC4429. They are capable of 6 A (peak) output and can drive the largest MOSFETs with an improved safe operating margin. The MIC4120/4129 accept any logic input from 2.4 V to VS without external speed-up capacitors or resistor networks. Proprietary circuits allow the input to swing negative by as much as 5 V without damaging the part. Additional circuits protect against damage from electrostatic discharge. MIC4120/4129 drivers can replace three or more discrete components, reducing PCB area requirements, simplifying product design, and reducing assembly cost. Modern BiCMOS/DMOS construction guarantees freedom from latch-up. The rail-to-rail swing capability insures adequate gate voltage to the MOSFET during power up/down sequencing.

The MIC4223/MIC4224/MIC4225 are a family of a dual 4 A, high-speed, low-side MOSFET gate drivers with logic-level driver enables. The devices are fabricated on Bipolar/CMOS/DMOS (BCD) process and operate from a 4.5 V to 18 V supply voltage. The devices parallel Bipolar and CMOS output stage architecture provides high current throughout the MOSFETs gate Miller Region allowing the driver to sink and source 4 A of peak current from a 12 V supply and quickly charge and discharge a 2000 pF load capacitance in under 15 ns, while allowing the outputs to swing within 0.3 V of V DD and 0.16 V of ground. The MIC4223/MIC4224/MIC4225 driver and enable inputs feature TTL and CMOS logic-level thresholds which are independent of supply voltage. Each driver features a dedicated active-high enable input which is internally pulled high to VDD through 100 kΩ, allowing the pins to be left unconnected if it is not required to disable the driver outputs. The driver inputs have been designed to protect against ground bounce and are protected to withstand -5 V of voltage swing at -40 mA. Driver outputs are also protected to withstand 500 mA of reverse current. The MIC4223/MIC4224/MIC4225 are available in three configurations using industry standard pin out; dual inverting (MIC4223), dual non-inverting (MIC4224) and complimentary (MIC4225). They are available in 8-pin SOIC and thermally enhanced ePadD 8-pin MSOP and support operating junction temperatures from -40°C to +125°C.

The MIC4223/MIC4224/MIC4225 are a family of a dual 4 A, high-speed, low-side MOSFET gate drivers with logic-level driver enables. The devices are fabricated on Bipolar/CMOS/DMOS (BCD) process and operate from a 4.5 V to 18 V supply voltage. The devices parallel Bipolar and CMOS output stage architecture provides high current throughout the MOSFETs Miller Region allowing the driver to sink and source 4 A of peak current from a 12 V supply and quickly charge and discharge a 2000 pF load capacitance in under 15ns, while allowing the outputs to swing within 0.3 V of VDD and 0.16 V of ground. The MIC4223/MIC4224/MIC4225 gate drivers and enable inputs feature TTL and CMOS logic-level thresholds which are independent of supply voltage. Each driver features a dedicated active-high enable input which is internally pulled high to VDD through 100 kΩ, allowing the pins to be left unconnected if it is not required to disable the driver outputs. The driver inputs have been designed to protect against ground bounce and are protected to withstand -5 V of voltage swing at -40 mA. Driver outputs are also protected to withstand 500 mA of reverse current. The MIC4223/MIC4224/MIC4225 are available in three configurations using industry standard pin out; dual inverting (MIC4223), dual non-inverting (MIC4224) and complimentary (MIC4225). They are available in 8-pin SOIC and thermally enhanced ePadD 8-pin MSOP and support operating junction temperatures from -40°C to +125°C.

The MIC4223/MIC4224/MIC4225 are a family of a dual 4 A, high-speed, low-side MOSFET gate drivers with logic-level driver enables. The devices are fabricated on Bipolar/CMOS/DMOS (BCD) process and operate from a 4.5 V to 18 V supply voltage. The devices parallel Bipolar and CMOS output stage architecture provides high current throughout the MOSFETs Miller Region allowing the driver to sink and source 4 A of peak current from a 12 V supply and quickly charge and discharge a 2,000 pF load capacitance in under 15 ns, while allowing the outputs to swing within 0.3 V of VDD and 0.16 V of ground. The MIC4223/MIC4224/MIC4225 gate drivers and enable inputs feature TTL and CMOS logic-level thresholds which are independent of supply voltage. Each driver features a dedicated active-high enable input which is internally pulled high to VDD through 100 kΩ, allowing the pins to be left unconnected if it is not required to disable the driver outputs. The driver inputs have been designed to protect against ground bounce and are protected to withstand -5 V of voltage swing at -40 mA. Driver outputs are also protected to withstand 500 mA of reverse current. The MIC4223/MIC4224/MIC4225 are available in three configurations using industry standard pin out; dual inverting (MIC4223), dual non-inverting (MIC4224) and complimentary (MIC4225). They are available in 8-pin SOIC and thermally enhanced ePadD 8-pin MSOP and support operating junction temperatures from -40°C to +125°C.

The MIC4414 and MIC4415 are low-side MOSFET gate drivers designed to switch an N-channel enhancement type MOSFET in low-side switch applications. The MIC4414 is a non-inverting driver and the MIC4415 is an inverting driver. These drivers feature short delays and high peak current to produce precise edges and rapid rise and fall times. The MIC4414/15 are powered from a 4.5 V to 18 V supply and can sink and source peak currents up to 1.5 A, switching a 1,000 pF capacitor in 12ns. The on-state gate drive output voltage is approximately equal to the supply voltage (no internal regulators or clamps). High supply voltages, such as 10 V, are appropriate for use with standard N-channel MOSFETs. Low supply voltages, such as 5 V, are appropriate for use with many logic-level N-channel MOSFETs. In a low-side configuration, the gate driver can control a MOSFET that switches any voltage up to the rating of the MOSFET. The MIC4414 and MIC4415 are available in an ultra-small 4-pin 1.2 x 1.2 mm thin QFN package and is rated for -40°C to +125°C junction temperature range.