M
Microchip Technology
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
Microchip Technology | Crystals Oscillators Resonators | CMOS OUTPUT CLOCK OSCILLATOR, 24MHZ NOM |
Microchip Technology | Crystals Oscillators Resonators | MEMS OSC |
Microchip Technology | Integrated Circuits (ICs) | 1GHZ ARM CORTEX A7 W/ MIPI CAMERA AND 2GB INTEGRATED DDR3L |
Microchip Technology | Discrete Semiconductor Products | DIODE GEN PURP 100V 12A DO203AA |
Microchip Technology MSMBJ5372BLTB | Circuit Protection | VOLTAGE REGULATOR |
Microchip Technology | Integrated Circuits (ICs) | OPERATIONAL AMPLIFIER, 1 CHANNELS, 10 MHZ, 15 V/ΜS, 2.2V TO 5.5V, SOT-23, 5 PINS |
Microchip Technology LE9531CMQCTObsolete | Integrated Circuits (ICs) | IC TELECOM INTERFACE 28QFN |
Microchip Technology MCP2021-330E/MD-AE2VAOObsolete | Integrated Circuits (ICs) | IC TRANSCEIVER |
Microchip Technology | Integrated Circuits (ICs) | MCU 8-BIT PIC16 PIC RISC 3.5KB FLASH 3.3V/5V 18-PIN SOIC W TUBE |
Microchip Technology VCC6-LCF-212M500000Obsolete | Crystals Oscillators Resonators | DIFFERENTIAL XO +3.3 VDC +/-5% L |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
JANTX2N5660-TransistorNPN Silicon Power 200V to 300V, 5A | Transistors | 1 | Active | This specification covers the performance requirements for NPN, silicon, power, 2N5660, 2N5660U3, 2N5661, 2N5661U3, 2N5662 and 2N5663 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/454. |
JANTX2N5662-TransistorMIL-PRF-19500/454 This specification covers the performance requirements for NPN, silicon, power, 2N5660, 2N5660U3, 2N5661, 2N5661U3, 2N5662 and 2N5663 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/454. | Bipolar (BJT) | 3 | Active | This specification covers the performance requirements for NPN, silicon, power, 2N5660, 2N5660U3, 2N5661, 2N5661U3, 2N5662 and 2N5663 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/454. The device packages for the encapsulated device types are as follows: (2N5660 and 2N5661) (similar to TO-66). The device packages for the encapsulated device types are as follows: (2N5662 and 2N5663) (similar to TO-5). The surfacemount device packages for the encapsulated device types are as follows: (2N5660U3, and 2N5661U3) in accordance with SMD 0.5 (U3). |
JANTX2N5666U3-TransistorNPN Silicon Power Switching 200V to 300V, 5A | Single Bipolar Transistors | 6 | Active | This specification covers the performance requirements for NPN, silicon, power, 2N5664, 2N5665, 2N5666 and 2N5667 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/455. Two levels of product assurance are provided for each un-encapsulated device type as specified in MIL-PRF-19500/455. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV and JANHC product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC product assurance level. RHA level designators; "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements. |
JANTX2N5681-TransistorNPN Silicon Amplifier 100V to 120V, 1A | Discrete Semiconductor Products | 2 | Active | This specification covers the performance requirements for NPN, silicon, amplifier, 2N5681 and 2N5682 transistors Complimentary to the 2N5679 and 2N5680 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device as specified in MIL-PRF-19500/583 and two levels of product assurance (JANHC and JANKC) are provided for unencapsulated devices. |
JANTX2N5684-TransistorPNP Silicon Power -60V to -80V, 50A | Single Bipolar Transistors | 2 | Active | This specification covers the performance requirements for PNP, silicon, power, 2N5683 and 2N5684 transistors, complimentary to 2N5686 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device as specified in MIL-PRF-19500/466. The device package outlines are as follows: similar to TO-3 for all encapsulated device types. |
JANTX2N5745-TransistorPNP Silicon Power -60V to -80V, -20A to -30A | Single Bipolar Transistors | 1 | Unknown | This specification covers the performance requirements for PNP silicon, high-power, 2N4399 and 2N5745 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/433. |
JANTX2N5793-Dual-TransistorNPN Silicon Dual 40V, 0.6A | Discrete Semiconductor Products | 4 | Active | This specification covers the performance requirements for unitized, dual transistors which contains a pair of electrically isolated matched and unmatched NPN, silicon , 2N5793 and 2N5794 Unitized, dual 2N2222A transistors in one package. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/495. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
JANTX2N6032-TransistorNPN Silicon Power 90V to 120V, 40A to 50A | Discrete Semiconductor Products | 1 | Active | This specification covers the performance requirements for NPN, silicon, power, 2N6032 and 2N6033 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/528. |
JANTX2N6051-DarlingtonDarlington PNP Silicon Power -80V to -100V, -12A | Bipolar (BJT) | 2 | Active | This specification covers the performance requirements for PNP, Darlington, silicon, power, 2N6051 and 2N6052 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/501. The device package outlines are as follows: TO-3 for all encapsulated device types. |
JANTX2N6193-TransistorPNP Silicon Switching -100V, -5A | Discrete Semiconductor Products | 3 | Active | This specification covers the performance requirements for PNP silicon switching, 2N6193 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/561. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type as specified in MIL-PRF-19500/561. Radiation hardness assurance (RHA) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements. Provisions for (RHA) to two radiation levels ("R" and "F") are provided for JANTXV product assurance level. The device packages for the encapsulated device types are as follows: (TO-39) and surface mount (U3). The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/561. |