Microchip Technology

This specification covers the performance requirements for NPN, silicon, power, 2N6674, 2N6675, 2N6689 and 2N6690 transistors for use in high-speed power-switching applications. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for encapsulated devices as specified in MIL-PRF-19500/537. The device package outlines are a modified TO-204AD (formerly TO-3) for types 2N6674 and 2N6675 or a TO-210AC (formerly TO-61) for types 2N6689 and 2N6690.

This specification covers the performance requirements for NPN, silicon, switching, medium power, 2N696 and 2N697 transistors. One level of product assurance (JAN) is provided for all encapsulated devices as specified in MIL-PRF-19500/99. The device package outlines are as follows: TO-205AA (formerly modified TO-5 without suffix S) or a TO-205AD (formerly modified TO-39 with suffix S) for all encapsulated device types.

This specification covers the performance requirements for NPN, silicon, switching, 2N6989 and 2N6990 Unitized transistors in a four independent 2N2222A transistor chip array. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/559. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F’, "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device packages for the encapsulated device types are as follows: 14-pin dual-in-line (2N6989), 14-pin flat-pack (2N6990) and 20-pin leadless chip carrier (2N6989U).

2N7000 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.