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Microchip Technology
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
Microchip Technology | Crystals Oscillators Resonators | CMOS OUTPUT CLOCK OSCILLATOR, 24MHZ NOM |
Microchip Technology | Crystals Oscillators Resonators | MEMS OSC |
Microchip Technology | Integrated Circuits (ICs) | 1GHZ ARM CORTEX A7 W/ MIPI CAMERA AND 2GB INTEGRATED DDR3L |
Microchip Technology | Discrete Semiconductor Products | DIODE GEN PURP 100V 12A DO203AA |
Microchip Technology MSMBJ5372BLTB | Circuit Protection | VOLTAGE REGULATOR |
Microchip Technology | Integrated Circuits (ICs) | OPERATIONAL AMPLIFIER, 1 CHANNELS, 10 MHZ, 15 V/ΜS, 2.2V TO 5.5V, SOT-23, 5 PINS |
Microchip Technology LE9531CMQCTObsolete | Integrated Circuits (ICs) | IC TELECOM INTERFACE 28QFN |
Microchip Technology MCP2021-330E/MD-AE2VAOObsolete | Integrated Circuits (ICs) | IC TRANSCEIVER |
Microchip Technology | Integrated Circuits (ICs) | MCU 8-BIT PIC16 PIC RISC 3.5KB FLASH 3.3V/5V 18-PIN SOIC W TUBE |
Microchip Technology VCC6-LCF-212M500000Obsolete | Crystals Oscillators Resonators | DIFFERENTIAL XO +3.3 VDC +/-5% L |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
2N700260V, 7.5 Ohm, N-Channel, Enhancement-Mode, Vertical DMOS FET | Discrete Semiconductor Products | 1 | Active | 2N7002 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. |
2N700860V, 7.5 Ohm, N-Channel, Enhancement-Mode, Vertical DMOS FET | Discrete Semiconductor Products | 1 | Active | 2N7008 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. |
| Discrete Semiconductor Products | 2 | Active | ||
2N708-TransistorMIL-PRF-19500/312 | Single Bipolar Transistors | 1 | Active | This specification covers the performance requirements for NPN silicon switching 2N708 transistors. Two levels of product assurance (JAN and JANTX) are provided for the device type as specified in MIL-PRF-19500/312. One level of product assurance (JANHC) is provided for unencapsulated device type (die) as specified in MIL-PRF-19500/312. The device package styles are as follows: Three terminal metal-can package TO-206AA (formerly TO-18) and unencapsulated die for device type JANHC. |
30KPA102CA-e330,000 Watt Transient Voltage Suppressor (TVS) Protection Device | Circuit Protection | 2 | Active | These Microchip 30 kW Transient Voltage Suppressors (TVSs) are designed for applications requiring protection of voltage-sensitive electronic devices that may be damaged by harsh or severe voltage transients including lightning per IEC61000-4-5 and class levels with various source impedances described herein. This series is available in 33 to 400 volt standoff voltages (VWM) in both unidirectional and bi-directional with either 5% or 10% tolerances of the Breakdown Voltage (VBR). Microchip also offers numerous other TVS products to meet higher or lower power demands and special applications. |
30KPA108A-e330,000 Watt Transient Voltage Suppressor (TVS) Protection Device | Circuit Protection | 2 | Active | These Microchip 30 kW Transient Voltage Suppressors (TVSs) are designed for applications requiring protection of voltage-sensitive electronic devices that may be damaged by harsh or severe voltage transients including lightning per IEC61000-4-5 and class levels with various source impedances described herein. This series is available in 33 to 400 volt standoff voltages (VWM) in both unidirectional and bi-directional with either 5% or 10% tolerances of the Breakdown Voltage (VBR). Microchip also offers numerous other TVS products to meet higher or lower power demands and special applications. |
30KPA120CA-e330,000 Watt Transient Voltage Suppressor (TVS) Protection Device | TVS Diodes | 3 | Active | These Microchip 30 kW Transient Voltage Suppressors (TVSs) are designed for applications requiring protection of voltage-sensitive electronic devices that may be damaged by harsh or severe voltage transients including lightning per IEC61000-4-5 and class levels with various source impedances described herein. This series is available in 33 to 400 volt standoff voltages (VWM) in both unidirectional and bi-directional with either 5% or 10% tolerances of the Breakdown Voltage (VBR). Microchip also offers numerous other TVS products to meet higher or lower power demands and special applications. |
30KPA132A-e330,000 Watt Transient Voltage Suppressor (TVS) Protection Device | Transient Voltage Suppressors (TVS) | 2 | Active | These Microchip 30 kW Transient Voltage Suppressors (TVSs) are designed for applications requiring protection of voltage-sensitive electronic devices that may be damaged by harsh or severe voltage transients including lightning per IEC61000-4-5 and class levels with various source impedances described herein. This series is available in 33 to 400 volt standoff voltages (VWM) in both unidirectional and bi-directional with either 5% or 10% tolerances of the Breakdown Voltage (VBR). Microchip also offers numerous other TVS products to meet higher or lower power demands and special applications. |
30KPA144A-e330,000 Watt Transient Voltage Suppressor (TVS) Protection Device | Transient Voltage Suppressors (TVS) | 3 | Active | These Microchip 30 kW Transient Voltage Suppressors (TVSs) are designed for applications requiring protection of voltage-sensitive electronic devices that may be damaged by harsh or severe voltage transients including lightning per IEC61000-4-5 and class levels with various source impedances described herein. This series is available in 33 to 400 volt standoff voltages (VWM) in both unidirectional and bi-directional with either 5% or 10% tolerances of the Breakdown Voltage (VBR). Microchip also offers numerous other TVS products to meet higher or lower power demands and special applications. |
30KPA150CA-e330,000 Watt Transient Voltage Suppressor (TVS) Protection Device | Circuit Protection | 4 | Active | These Microchip 30 kW Transient Voltage Suppressors (TVSs) are designed for applications requiring protection of voltage-sensitive electronic devices that may be damaged by harsh or severe voltage transients including lightning per IEC61000-4-5 and class levels with various source impedances described herein. This series is available in 33 to 400 volt standoff voltages (VWM) in both unidirectional and bi-directional with either 5% or 10% tolerances of the Breakdown Voltage (VBR). Microchip also offers numerous other TVS products to meet higher or lower power demands and special applications. |