M
Microchip Technology
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
Microchip Technology | Crystals Oscillators Resonators | CMOS OUTPUT CLOCK OSCILLATOR, 24MHZ NOM |
Microchip Technology | Crystals Oscillators Resonators | MEMS OSC |
Microchip Technology | Integrated Circuits (ICs) | 1GHZ ARM CORTEX A7 W/ MIPI CAMERA AND 2GB INTEGRATED DDR3L |
Microchip Technology | Discrete Semiconductor Products | DIODE GEN PURP 100V 12A DO203AA |
Microchip Technology MSMBJ5372BLTB | Circuit Protection | VOLTAGE REGULATOR |
Microchip Technology | Integrated Circuits (ICs) | OPERATIONAL AMPLIFIER, 1 CHANNELS, 10 MHZ, 15 V/ΜS, 2.2V TO 5.5V, SOT-23, 5 PINS |
Microchip Technology LE9531CMQCTObsolete | Integrated Circuits (ICs) | IC TELECOM INTERFACE 28QFN |
Microchip Technology MCP2021-330E/MD-AE2VAOObsolete | Integrated Circuits (ICs) | IC TRANSCEIVER |
Microchip Technology | Integrated Circuits (ICs) | MCU 8-BIT PIC16 PIC RISC 3.5KB FLASH 3.3V/5V 18-PIN SOIC W TUBE |
Microchip Technology VCC6-LCF-212M500000Obsolete | Crystals Oscillators Resonators | DIFFERENTIAL XO +3.3 VDC +/-5% L |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Transistors | 1 | Active | ||
2N5002-TransistorMIL-PRF-19500/534 | Single Bipolar Transistors | 1 | Active | This specification covers the performance requirements for NPN, silicon, power, 2N5002 and 2N5004 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/534. Two levels of product assurance (JANHC and JANKC) for each unencapsulated device type die. The device package outline is a TO-210AA (formerly TO-59) for all encapsulated device types. |
2N5004-TransistorMIL-PRF-19500/534 | Transistors | 1 | Active | This specification covers the performance requirements for NPN, silicon, power, 2N5002 and 2N5004 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/534. Two levels of product assurance (JANHC and JANKC) for each unencapsulated device type die. The device package outline is a TO-210AA (formerly TO-59) for all encapsulated device types. |
2N5005-TransistorMIL-PRF-19500/535 | Single Bipolar Transistors | 1 | Active | This specification covers the performance requirements for PNP, silicon, through hole power, 2N5003 and 2N5005 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type and two levels of product assurance (JANHC and JANKC) are provided for unencapsulated devices as specified in MIL-PRF-19500/535. The device package outline is a TO-210AA (formerly TO-59) for all encapsulated device types. |
2N5011S-TransistorNPN Silicon Switching 400V to 760V, 0.2A | Single Bipolar Transistors | 1 | Active | This specification covers the performance requirements for NPN, silicon, 2N5010 through 2N5015 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/727. |
| Bipolar (BJT) | 1 | Active | ||
| Single Bipolar Transistors | 1 | Active | ||
2N5114UB-JFET-PChannelField Effect Transistor FET P-Channel -30V, -0.015A to -0.6A | Discrete Semiconductor Products | 2 | Active | This specification covers the performance requirements for P-channel, junction, silicon field-effect, 2N5114 Through 2N5116 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/476. |
2N5116UB-JFET-PChannelField Effect Transistor FET P-Channel -30V, -0.015A to -0.6A | Discrete Semiconductor Products | 1 | Unknown | This specification covers the performance requirements for P-channel, junction, silicon field-effect, 2N5114 Through 2N5116 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/476. |
2N5151U3-TransistorPNP Silicon Power -80V, -2A | Bipolar (BJT) | 1 | Active | This specification covers the performance requirements for PNP, silicon, power, 2N5151 and 2N5153 transistors, complimentary to the 2N5152 and 2N5154 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/545 and Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type as specified in MIL-PRF-19500/545. Provisions for radiation hardness assurance (RHA) to eight radiation levels ("M", "D", "P", "L," "R", "F", "G", and "H") are provided for JANTXV and JANS product assurance levels. |