M
Microchip Technology
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
Beta
⌘K
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description |
|---|---|---|---|---|---|
| Part | Category | Description |
|---|---|---|
Microchip Technology | Crystals Oscillators Resonators | CMOS OUTPUT CLOCK OSCILLATOR, 24MHZ NOM |
 Microchip Technology | Crystals Oscillators Resonators | MEMS OSC |
 Microchip Technology | Integrated Circuits (ICs) | 1GHZ ARM CORTEX A7 W/ MIPI CAMERA AND 2GB INTEGRATED DDR3L |
 Microchip Technology | Discrete Semiconductor Products | DIODE GEN PURP 100V 12A DO203AA |
 Microchip Technology MSMBJ5372BLTB | Circuit Protection | VOLTAGE REGULATOR |
 Microchip Technology | Integrated Circuits (ICs) | OPERATIONAL AMPLIFIER, 1 CHANNELS, 10 MHZ, 15 V/ΜS, 2.2V TO 5.5V, SOT-23, 5 PINS |
Microchip Technology LE9531CMQCTObsolete | Integrated Circuits (ICs) | IC TELECOM INTERFACE 28QFN |
 Microchip Technology MCP2021-330E/MD-AE2VAOObsolete | Integrated Circuits (ICs) | IC TRANSCEIVER |
 Microchip Technology | Integrated Circuits (ICs) | MCU 8-BIT PIC16 PIC RISC 3.5KB FLASH 3.3V/5V 18-PIN SOIC W TUBE |
Microchip Technology VCC6-LCF-212M500000Obsolete | Crystals Oscillators Resonators | DIFFERENTIAL XO +3.3 VDC +/-5% L |
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
2N2222AUBC-TransistorNPN Silicon Switching 50V, 0.8A | Bipolar (BJT) | 1 | Active | This specification covers the performance requirements for NPN, silicon, switching 2N2221 and 2N2222 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/255 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. RHA level designators "E", "K", "U", "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
| Bipolar (BJT) | 1 | Active | ||
| Transistors | 15 | Active | ||
2N2369AUA-TransistorNPN Switching 15V to 20V, 0.1A | Transistors | 2 | Active | This specification covers the performance requirements for NPN, silicon, high speed switching 2N2369A, 2N3227 and 2N4449 transistors (including dual devices). Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/317 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC. RHA level designators "M", "D", "P", "L", "R", "F’, "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
2N2369AUB-TransistorNPN Switching 15V to 20V, 0.1A | Bipolar (BJT) | 1 | Unknown | This specification covers the performance requirements for NPN, silicon, high speed switching 2N2369A, 2N3227 and 2N4449 transistors (including dual devices). Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/317 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC. RHA level designators "M", "D", "P", "L", "R", "F’, "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. |
| Transistors | 1 | Active | ||
2N2608-JFET-PChannelMIL-PRF-19500/296 | Discrete Semiconductor Products | 1 | Active | This specification covers the performance requirements for P-channel, junction, silicon field-effect 2N2609 transistors. One level of product assurance (JAN) is provided for each device type as specified in MIL-PRF-19500/296. The device package outlines are a modified DO-206AA (formerly a modified TO-18) and an unleaded surface mount (UB). |
2N2609-JFET-PChannelSilicon Field Effect Transistor FET P-Channel | Transistors | 1 | Active | This specification covers the performance requirements for P-channel, junction, silicon field-effect 2N2609 transistors. One level of product assurance (JAN) is provided for each device type as specified in MIL-PRF-19500/296. The device package outlines are a modified DO-206AA (formerly a modified TO-18) and an unleaded surface mount (UB). |
| Single Bipolar Transistors | 1 | Active | ||
| Discrete Semiconductor Products | 1 | Active | ||