2N2369AUA-Transistor Series

NPN Switching 15V to 20V, 0.1A

Catalog

NPN Switching 15V to 20V, 0.1A

Part	Package / Case	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Power - Max [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)
Microchip Technology 2N2369AUA/TR	4-SMD No Lead	NPN	20	UA	360 mW	Surface Mount	400 nA	450 mV	15 V
Microchip Technology 2N2369AUA	4-SMD No Lead	NPN	20	UA	360 mW	Surface Mount	400 nA	450 mV	15 V

Catalog

NPN Switching 15V to 20V, 0.1A

Key Features

- The device packages for the encapsulated (THROUGH-HOLE AND SURFACE MOUNT) device types are as follows: (2N2369A and 2N3227) (TO-18), (2N4449) (TO-46), (2N2369A 2N3227, 2N4449) (UB, UBC, and UBCN), (UA version), (U version dual devices).

- The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/317.

Description

This specification covers the performance requirements for NPN, silicon, high speed switching 2N2369A, 2N3227 and 2N4449 transistors (including dual devices). Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/317 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC. RHA level designators "M", "D", "P", "L", "R", "F’, "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.