LITTELFUSE

The SP1021 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in the IEC61000-4-2 international standard (Level 4, ±8kV contact discharge) without performance degradation. The back-to-back configuration provides symmetrical ESD protection for data lines when AC signals are present.

The SP1026 back-to-back diodes are fabricated in a proprietary silicon avalanche technology. These diodes provide a high ESD (electrostatic discharge) protection level for electronic equipment. The SP1026 TVS can safely absorb repetitive ESD strikes at ±30kV (contact discharge, IEC 61000-4-2) without performance degradation. Additionally, each diode can safely dissipate 5A of 8/20μs surge current (IEC 61000-4-5) with very low clamping voltages.

This series is not recommended for new designs. Suggests to use SP1026-01UTG for the new designs in near future. The SP1027 back-to-back diodes are fabricated in a proprietary silicon avalanche technology. These diodes provide a high ESD (electrostatic discharge) protection level for electronic equipment. The SP1027 TVS can safely absorb repetitive ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4, ±8kV contact discharge) without performance degradation. The back-to-back configuration provides symmetrical ESD protection for data and I/O - lines. The WLCSP package is encapsulated in epoxy.

This series is not recommended for new designs. Suggests to use SP1021-01WTG for the new designs in near future. Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at ±12kV (contact discharge, IEC 61000-4-2) without performance degradation.

This series is not recommended for new designs. Suggests to use SP1020-01WTG for the new designs in near future. Zener diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at ±30kV (contact discharge, IEC 61000-4-2) without performance degradation. Additionally, each diode can safely dissipate 3A of 8/20μs surge current (IEC 61000-4-5 2nd edition) with very low clamping voltages.

The SP1050-04BTG provides over-voltage protection for Power-over-Ethernet PSE equipment in a space saving SOIC-8 package. It incorporates 4 TVS Diodes each with their own decoupling capacitor to stabilize power supplies. The SP1050 is compatible with IEEE 802.3af and IEEE 802.3at requirements while allowing PoE based systems to be protected against damaging threats such as lightning induced surges (IEC61000-4-5), electrical fast transients (IEC61000-4-4), and Electrostatic Discharges (IEC61000-4-2). The low clamping voltage of 96V makes it compatible with PSE controller technologies.

This series is not recommended for new designs. Suggests to use SP1021-01WTG for the new designs in near future. Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at ±8kV (contact discharge, IEC 61000-4-2) without performance degradation. Additionally, each diode can safely withstand 1.0A surge (8/20 waveshape as defined in IEC 61000-4-5 2nd edition) at a very low clamping voltage.

This series is not recommended for new designs. Suggests to use SP1020-01WTG for the new designs in near future. Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at ±30kV (contact discharge, IEC 61000-4-2) without performance degradation. Additionally, each diode can safely withstand 2.5A surge (8/20 waveshape as defined in IEC 61000-4-5 2nd edition) at a very low clamping voltage.

The SP1064 is an avalanche breakdown diode fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in IEC 61000-4-2 international standard (Level 4, ±8kV contact discharge) without performance degradation. Their very low loading capacitance also makes them ideal for protecting high speed signal pins.

The SP1064E-04UTG is an avalanche breakdown diode fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in IEC 61000-4-2 international standard (Level 4, ±8kV contact discharge) without performance degradation.