LITTELFUSE

Littelfuse miniature leaded epoxy coated thermistors are manufactured using the same state of the art manufacturing techniques as those used to produce Littelfuse precision interchangeable devices. This results in devices with superior long term reliability characteristics especially suitable for temperature measurement, temperature control and temperature compensation applications. Options: Special lead materials and lengths Special encapsulants or probe housings Non-standard resistance values and tolerances Point matched at specified temperatures

Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at ±30kV (contact and air discharge, IEC 61000- 4-2) without performance degradation. Additionally, each diode can safely dissipate 80A (SC1105) of 8/20μs surge current (IEC 61000-4-5 2nd edition) with very low clamping voltages.

Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at ±30kV (contact and air discharge, IEC 61000- 4-2) without performance degradation. Additionally, each diode can safely dissipate 80A (SC1105) of 8/20μs surge current (IEC 61000-4-5 2nd edition) with very low clamping voltages.

Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at ±30kV (contact and air discharge, IEC 61000- 4-2) without performance degradation. Additionally, each diode can safely dissipate 80A (SC1105) of 8/20μs surge current (IEC 61000-4-5 2nd edition) with very low clamping voltages.

The SC1205-01UTG bidirectional TVS is fabricated in a proprietary silicon avalanche technology. These diodes provide a high ESD (electrostatic discharge) protection level for electronic equipment. The SC1205-01UTG TVS can safely absorb repetitive ESD strikes of ±30 kV (contact and air discharge as defined in IEC 61000-4-2) without any performance degradation. Additionally,, each TVS can safely dissipate a 7A 8/20us surge event as defined in IEC 61000- 4-5 2nd Edition

The SC1333-01ETG back-to-back diodes are fabricated in a proprietary silicon avalanche technology. These diodes provide a high ESD (electrostatic discharge) protection level for electronic equipment. The SC1333-01ETG TVS can safely absorb repetitive ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4, ±8kV contact discharge) without performance degradation. The back-to-back configuration provides symmetrical ESD protection for data lines. Additionally, the SC1333-01ETG offers up to 5A 8/20μs surge rating with low clamping voltages.