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Inventchip

Series

Product families from Inventchip

Series	Category	Parts	Status	Description

Standalone parts

Parts that are not part of a series

Standalone parts(70)

Parts from Inventchip that are not part of a series

Part Information	Pricing (lowest)	Mounting Type	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Capacitance	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Package Name	Reverse Recovery Time (trr)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Voltage - Forward (Vf) (Max)	Package / Case	Current - Reverse Leakage
IV1D06004P3 Inventchip DIODE SIL CARB 650V 4A TO252-3	Sign in to see pricing Log in Sign up free	Surface Mount	175 °C	-55 °C	140 pF	SiC (Silicon Carbide) Schottky	650 V	12.7 A	TO-252	0 ns	500 mA	No Recovery Time	500 mA, 500 mA	1.65 V	DPAK (2 Leads + Tab), SC-63, TO-252-3	10 µA
IV1D06006O2 Inventchip DIODE SIL CARB 650V 17.4A TO220	Sign in to see pricing Log in Sign up free	Through Hole	175 °C	-55 °C	212 pF	SiC (Silicon Carbide) Schottky	650 V	17.4 A	TO-220-2	0 ns	500 mA	No Recovery Time	500 mA, 500 mA	1.65 V	TO-220-2	10 µA
IV1D06006P3 Inventchip DIODE SIL CARB 650V 16.7A TO2523	Sign in to see pricing Log in Sign up free	Surface Mount	175 °C	-55 °C	224 pF	SiC (Silicon Carbide) Schottky	650 V	16.7 A	TO-252-3	0 ns	500 mA	No Recovery Time	500 mA, 500 mA	1.65 V	DPAK (2 Leads + Tab), SC-63, TO-252-3	10 µA
IV1D06010O2 Inventchip DIODE SIL CARB 650V 10A TO220-2	Sign in to see pricing Log in Sign up free	Through Hole	175 °C	-55 °C	398 pF	SiC (Silicon Carbide) Schottky	650 V	29.3 A	TO-220-2	0 ns	500 mA	No Recovery Time	500 mA, 500 mA	1.55 V	TO-220-2	10 µA
IV1D06010T2 Inventchip DIODE SIL CARB 650V 10A TO247-2	Sign in to see pricing Log in Sign up free	Through Hole	175 °C	-55 °C	398 pF	SiC (Silicon Carbide) Schottky	650 V	30.4 A	TO-247-2	0 ns	500 mA	No Recovery Time	500 mA, 500 mA	1.55 V	TO-247-2	10 µA
IV1D06020T2 Inventchip DIODE SIL CARB 650V 20A TO247-2	Sign in to see pricing Log in Sign up free	Through Hole	175 °C	-55 °C	716 pF	SiC (Silicon Carbide) Schottky	650 V	50.1 A	TO-247-2	0 ns	500 mA	No Recovery Time	500 mA, 500 mA	1.65 V	TO-247-2	100 µA
IV1D12005O2 Inventchip DIODE SIL CARB 1200V 17A TO220	Sign in to see pricing Log in Sign up free	Through Hole	175 °C	-55 °C	320 pF	SiC (Silicon Carbide) Schottky	1200 V	17 A	TO-220-2	0 ns	500 mA	No Recovery Time	500 mA, 500 mA	1.8 V	TO-220-2	30 µA
IV1D12010O2 Inventchip DIODE SIL CARB 1200V 28A TO220	Sign in to see pricing Log in Sign up free	Through Hole	175 °C	-55 °C	575 pF	SiC (Silicon Carbide) Schottky	1200 V	28 A	TO-220-2	0 ns	500 mA	No Recovery Time	500 mA, 500 mA	1.8 V	TO-220-2	50 µA
IV1D12010T2 Inventchip DIODE SIL CARB 1200V 30A TO2472	Sign in to see pricing Log in Sign up free	Through Hole	175 °C	-55 °C	575 pF	SiC (Silicon Carbide) Schottky	1200 V	30 A	TO-247-2	0 ns	500 mA	No Recovery Time	500 mA, 500 mA	1.8 V	TO-247-2	50 µA
IV1D12015T2 Inventchip DIODE SIL CARB 1200V 44A TO2472	Sign in to see pricing Log in Sign up free	Through Hole	175 °C	-55 °C	888 pF	SiC (Silicon Carbide) Schottky	1200 V	44 A	TO-247-2	0 ns	500 mA	No Recovery Time	500 mA, 500 mA	1.8 V	TO-247-2	80 µA

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