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IV1D06006P3
Discrete Semiconductor Products

IV1D06006P3

Active
Inventchip

DIODE SIL CARB 650V 16.7A TO2523

IV1D06006P3
Discrete Semiconductor Products

IV1D06006P3

Active
Inventchip

DIODE SIL CARB 650V 16.7A TO2523

Technical Specifications

Parameters and characteristics for this part

SpecificationIV1D06006P3
Capacitance224 pF
Current - Average Rectified (Io)16.7 A
Current - Reverse Leakage10 µA
Mounting TypeSurface Mount
Operating Temperature - Junction (Max)175 °C
Operating Temperature - Junction (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameTO-252-3
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Speed - Fast Recovery (Minimum)500 mA
Speed - Recovery Current500 mA, 500 mA
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max)1.65 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyCut Tape (CT) 1$ 1.93<4d
10$ 1.23
100$ 0.82
500$ 0.65
1000$ 0.60
Tape & Reel (TR) 2500$ 0.54<4d
5000$ 0.50
7500$ 0.48
12500$ 0.46
17500$ 0.45

CAD

3D models and CAD resources for this part

Description

General part information

IV1D06006P3

DIODE SIL CARB 650V 16.7A TO2523

Documents

Technical documentation and resources

No documents available