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Technical Specifications
Parameters and characteristics for this part
| Specification | IV1D12015T2 |
|---|---|
| Capacitance @ Vr, F | 888 pF |
| Current - Average Rectified (Io) | 44 A |
| Current - Reverse Leakage @ Vr | 80 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | TO-247-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | TO-247-2 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If | 15 A |
| Voltage - Forward (Vf) (Max) @ If [Max] | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 60 | $ 4.15 | |
Description
General part information
IV1D12015T2
DIODE SIL CARB 1200V 44A TO2472
Documents
Technical documentation and resources
No documents available