Technical Specifications
Parameters and characteristics for this part
| Specification | IV1D12015T2 |
|---|---|
| Capacitance | 888 pF |
| Current - Average Rectified (Io) | 44 A |
| Current - Reverse Leakage | 80 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-247-2 |
| Package Name | TO-247-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 4.49 | <4d |
| 30 | $ 2.47 | |||
| 120 | $ 2.03 | |||
| 510 | $ 1.70 | |||
| 1020 | $ 1.58 | |||
| 2010 | $ 1.49 | |||
| 5010 | $ 1.43 | |||
CAD
3D models and CAD resources for this part
Description
General part information
IV1D12015T2
DIODE SIL CARB 1200V 44A TO2472
Documents
Technical documentation and resources
No documents available