Technical Specifications
Parameters and characteristics for this part
| Specification | IV1D12010O2 |
|---|---|
| Capacitance | 575 pF |
| Current - Average Rectified (Io) | 28 A |
| Current - Reverse Leakage | 50 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction (Max) | 175 °C |
| Operating Temperature - Junction (Min) | -55 °C |
| Package / Case | TO-220-2 |
| Package Name | TO-220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Speed - Fast Recovery (Minimum) | 500 mA |
| Speed - Recovery Current | 500 mA, 500 mA |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | Updated |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 3.42 | <4d |
| 50 | $ 1.71 | |||
| 100 | $ 1.54 | |||
| 500 | $ 1.25 | |||
| 1000 | $ 1.16 | |||
| 2000 | $ 1.08 | |||
| 5000 | $ 0.99 | |||
| 10000 | $ 0.99 | |||
CAD
3D models and CAD resources for this part
Description
General part information
IV1D12010O2
DIODE SIL CARB 1200V 28A TO220
Documents
Technical documentation and resources
No documents available