Analog Devices

The HMC451LP3(E) is an efficient GaAs pHEMT MMIC Medium Power Amplifier housed in a leadless RoHS compliant SMT package. Operating between 5 and 18 GHz, the amplifier provides 18 dB of gain, +21 dBm of saturated power and 18% PAE from a single +5V supply. This 50 Ω matched amplifier does not require any external components and the RF I/O’s are DC blocked, making it an ideal linear gain block or LO driver for HMC mixers. The HMC451LP3(E) eliminates the need for wire bonding, and allows the use of surface mount manufacturing techniques.ApplicationsMicrowave Radio & VSATMilitary & SpaceTest Equipment & SensorsFiber OpticsLO Driver for HMC Mixers

The HMC452ST89(E) is a high dynamic range GaAs InGaP HBT 1 Watt MMIC power amplifier operating from 0.4 to 2.2 GHz and packaged in industry standard SOT89 packages. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +45 dBm at 0.4 GHz or +49 dBm at 2.1 GHz. The high output IP3 and PAE make the HMC452ST89(E) ideal power amplifier for Cellular/ PCS/3G and Fixed Wireless applications.ApplicationsGSM, GPRS & EDGECDMA & W-CDMACATV/Cable ModemFixed Wireless

The HMC453ST89(E) is a high dynamic range GaAs InGaP HBT 1.6 Watt MMIC power amplifier operating from 0.4 to 2.2 GHz and packaged in industry standard SOT89 packages. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +49 dBm at 2.1 GHz. The high output IP3 and PAE make the HMC453ST89(E) ideal power amplifier for Cellular/ PCS/3G and Fixed Wireless applications.ApplicationsGSM, GPRS & EDGECDMA & W-CDMACATV/Cable ModemFixed Wireless

The HMC454ST89(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1⁄2 watt MMIC amplifier operating between 0.4 and 2.5 GHz. Packaged in a low cost industry standard SOT89, the amplifier gain is typically 17.8 dB from 0.8 to 1.0 GHz and 12.5 dB from 1.8 to 2.2 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +40 dBm at 0.9 GHz or +42 dBm at 2.0 GHz. The high output IP3 and PAE makes the HMC454ST89(E) an ideal driver amplifier for Cellular/PCS/3G, WLL, ISM and Fixed Wireless applications.ApplicationsGSM, GPRS & EDGECDMA & W-CDMACATV/Cable ModemFixed Wireless & WLL

The HMC459 is a GaAs MMIC PHEMT Distributed Power Amplifier die which operates between DC and 18 GHz. The amplifier provides 17 dB of gain, +31.5 dBm output IP3 and +25 dBm of output power at 1 dB gain compression while requiring 290 mA from a +8V supply. Gain flatness is good making the HMC459 ideal for EW, ECM and radar driver amplifier applications. The HMC459 amplifier I/O’s are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).ApplicationsTelecom InfrastructureMicrowave Radio & VSATMilitary & SpaceTest Instrumentation

The HMC460 is a GaAs MMIC PHEMT Low Noise Distributed Amplifier die which operates between DC and 20 GHz. The amplifier provides 14 dB of gain, 2.5 dB noise figure and +16 dBm of output power at 1 dB gain compression while requiring only 60 mA from a +8V supply. The HMC460 amplifier can easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).APPLICATIONSTelecom InfrastructureMicrowave Radio & VSATMilitary & SpaceTest Instrumentation

The HMC462 is a GaAs MMIC PHEMT Low Noise Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 15 dB of gain, 2.0 to 2.5 dB noise figure and +15 dBm of output power at 1 dB gain compression while requiring only 63 mA from a single +5V supply. Gain flatness is excellent at ±0.5 dB from 6 - 18 GHz making the HMC462 ideal for EW, ECM and RADAR applications.The HMC462 requires a single supply of +5V @ 63 mA and is the self-biased version of the HMC463. The wideband amplifier I/Os are internally matched to 50 Ohms facilitating easy integration into Multi-Chip-Modules (MCMs). All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).ApplicationsTelecom InfrastructureMicrowave Radio & VSATMilitary & SpaceTest InstrumentationFiber Optics

The HMC465LP5(E) is a GaAs MMIC PHEMT Distributed Driver Amplifier packaged in leadless 5x5 mm surface mount package which operate between DC and 20 GHz. The amplifier provides 15 dB of gain, 3 dB noise figure and +25 dBm of saturated output power while requiring only 160 mA from a +8V supply. Gain flatness is excellent at ±0.5 dB as well as ±4 deg deviation from linear phase from DC - 10 GHz making the HMC465LP5(E) ideal for OC192 fiber optic LN/MZ modulator driver amplifiers as well as test equipment applications. The HMC465LP5(E) amplifiers I/Os are internally matched to 50 Ohms.ApplicationsOC192 LN/MZ modulator driverMicrowave radio andVSATTest instrumentationMilitary EW, ECM & C³I