Analog Devices

The HMC376LP3 & HMC376LP3E are GaAs PHEMT MMIC Low Noise Amplifiers that are ideal for GSM & CDMA cellular basestation front-end receivers operating between 700 and 1000 MHz. The amplifier has been optimized to provide 0.7 dB noise figure, 15 dB gain and +36 dBm output IP3 from a single supply of +5V. The HMC376LP3(E) feature an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. For applications which require improved noise figure, please see the HMC617LP3(E).ApplicationsCellular/3G InfrastructureBase Stations & RepeatersCDMA, W-CDMA, & TD-SCDMAPrivate Land Mobile RadioGSM/GPRS & EDGEUHF Reallocation Applications

The HMC377QS16G(E) is a linear downconverter receiver IC suitiable for cellular infrastructure applications from 0.8 - 1.0 GHz. An integrated mixer coupled with a high dynamic range IF amplifier achieves an input intercept point (IP3) of +15 dBm, and an input P1dB of +3.5 dBm. The converter provides a gain of 13.5 dB and only 11 dB typical single side band noise figure. The IC operates from a positive +5V rail consuming 135 mA of current while requiring only -5 dBm LO drive. The design requires no external baluns. The mixer supports IF frequencies between 50 MHz and 250 MHz.ApplicationsGSM & CDMA InfrastructureGPRS & EDGE InfrastructureWireless Data/CDPD

The HMC382LP3 & HMC382LP3E high dynamic range GaAs PHEMT MMIC Low Noise Amplifiers are ideal for GSM & CDMA cellular basestation front-end receivers operating between 1.7 and 2.2 GHz. This LNA has been optimized to provide 1.0 dB noise figure, 17 dB gain and +30 dBm output IP3 from a single supply of +5V. The HMC382LP3 & HMC382LP3E feature an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. For applications which require improved noise figure, please see the HMC618LP3(E).ApplicationsCellular/3G InfrastructureBase Stations & RepeatersCDMA, W-CDMA, & TD-SCDMAGSM/GPRS & EDGE

The HMC383 is a general purpose GaAs PHEMT MMIC Driver Amplifier which operates between 12 and 30 GHz. The amplifier provides 16 dB of gain and +18 dBm of saturated power from a +5V supply. Consistent gain and output power across the operating band make it possible to use a common driver/LO amplifier approach in multiple radio bands. The HMC383 amplifier can easily be integrated into Multi-Chip-Modules (MCMs) due to its compact size, single supply operation, and DC blocked RF I/Os. All data is measured with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).ApplicationsPoint-to-Point RadiosPoint-to-Multi-Point Radios & VSATTest Equipment & SensorsLO Driver for HMC MixersMilitary & Space

The HMC388LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 3.15 to 3.4 GHz, the VCO’s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator’s monolithic structure. Power output is 4.9 dBm typical from a single supply of 3V @ 39mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4×4 mm surface mount package.APPLICATIONSWireless Local Loop (WLL)VSAT & Microwave RadioTest Equipment & Industrial ControlsMilitary

The HMC390LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 3.55 to 3.9 GHz, the VCO’s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator’s monolithic structure. Power output is 4.7 dBm typical from a single supply of 3V @ 42 mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4×4 mm surface mount package.APPLICATIONSWireless Local Loop (WLL)VSAT & Microwave RadioTest Equipment & Industrial ControlsMilitary

The HMC391LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCOs with integrated resonators, negative resistance devices, varactor diodes, and buffer amplifiers. Covering 3.9 to 4.45 GHz, the VCO’s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator’s monolithic structure. Power output is 5 dBm typical from a single supply of +3V @ 30mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4×4 mm surface mount package.APPLICATIONSVSAT & Microwave RadioRadio AltimetryTest Equipment & Industrial ControlsMilitary