Analog Devices Inc./Maxim Integrated

The HMC717ALP3E is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for fixed wireless and LTE/WiMAX/4G basestation front-end receivers operating between 4.8 and 6.0 GHz. The amplifier has been optimized to provide 1.1 dB noise figure, 14.5 dB gain and +29.5 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC717ALP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application.ApplicationsFixed wireless and LTE/WiMAX/4GBTS and infrastructureRepeaters and FemtocellsPublic safety radioAccess points

The HMC717ALP3E is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for fixed wireless and LTE/WiMAX/4G basestation front-end receivers operating between 4.8 and 6.0 GHz. The amplifier has been optimized to provide 1.1 dB noise figure, 14.5 dB gain and +29.5 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC717ALP3E can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application.ApplicationsFixed wireless and LTE/WiMAX/4GBTS and infrastructureRepeaters and FemtocellsPublic safety radioAccess points

The HMC721LP3E is a XOR/XNOR gate function designed to support data transmission rates of up to 14 Gbps, and clock frequencies as high as 14 GHz.All differential inputs to the HMC721LP3E are CML and terminated on-chip with 50 Ohms to the positive supply, GND, and may be DC or AC coupled. Outputs can be connected directly to a 50 Ohm ground-terminated system or drive devices with CML logic input. The HMC721LP3E also features an ouput level control pin, VR, which allows for loss compensation or signal level optimization. The HMC721LP3E operates from a single -3.3 V supply and is available in ROHS-compliant 3x3 mm SMT package.APPLICATIONSThe HMC721LP3E is ideal for:16 G Fiber ChannelRF ATE ApplicationsBroadband Test & MeasurementSerial Data Transmission up to 14 GbpsDigital Logic Systems up to 14 GHz

The HMC7229LS6 is a four stage, gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 1 W power amplifier, with an integrated temperature compensated on-chip power detector that operates between 37 GHz to 40 GHz. The HMC7229LS6 provides 24 dB of gain and 32 dBm of saturated output power at 18% PAE at 39 GHz from a 6 V supply. With an excellent IP3 of 40 dBm, the HMC7229LS6 is ideal for linear applications such as high capacity, point to point or multipoint radios or VSAT/SATCOM applications demanding 32 dBm of efficient saturated output power. The radio frequency (RF) input/outputs are internally matched and dc blocked for ease of integration into higher level assemblies. The HMC7229LS6 is housed in a ceramic, 6 mm × 6 mm, high frequency, air cavity package that exhibits low thermal resistance and is compatible with surface-mount manufacturing techniques.ApplicationsPoint to point radiosPoint to multipoint radiosVery small aperture terminal (VSAT) and satellite communications (SATCOM)