Analog Devices Inc./Maxim Integrated

The HMC347A is a broadband, nonreflective, gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), single-pole, double throw (SPDT), monolithic microwave integrated circuit (MMIC) chip. The switch operates from 0.1 GHz to 20 GHz with an insertion loss of <2.0 dB and an isolation of >40 dB due to the implementation of on-chip, via hole structures.The switch operates with two negative control voltage inputs (VCTL= −5 V/0 V) and requires no supply. All electrical performance data is acquired with the RFx pads of the HMC347A connected to 50 Ω transmission lines via one 3.0 mil × 0.5 mil ribbon of minimal length.ApplicationsTest instrumentationsMicrowave radio(s) and very small aperture terminals (VSATs)Military radios, radars, electronic counter measure (ECMs)Broadband telecommunications systems

The HMC347ALP3E is a broadband high isolation non-reflective GaAs pHEMT SPDT switch in low cost leadless QFN surface mount plastic package. Covering DC to 14 GHz, the switch offers high isolation and low insertion loss. The switch features >54 dB isolation up to 3 GHz and >44 dB isolation up to 13 GHz. The switch operates using complementary negative control voltage logic lines of -5/0V and requires no bias supply.ApplicationsBasestation infrastructureFiber optics and broadband telecomMicrowave radio and VSATMilitary radios, Radar, and ECMTest instrumentation

The HMC347B is a broadband, nonreflective gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) SPDT monolithic microwave integrated circuit (MMIC) chip. The switch operates from 0.1 GHz to 20 GHz with an insertion loss of 1.7 dB and an isolation of 46 dB to 20 GHz due to the implementation of on-chip, via hole structuresThe switch operates with two negative control voltage inputs (VCTL = −5 V or 0 V), requires no supply, and has no current consumption. All electrical performance data is acquired with the RFx pads of the HMC347B connected to 50 Ω transmission lines via one 3.0 mil × 0.5 mil ribbon of minimal length.ApplicationsTest instrumentationsMicrowave radios and very small aperture terminals (VSATs)Military radios, radars, electronic counter measure (ECMs)Broadband telecommunications systems

The HMC348LP3(E) is a non-reflective GaAs MESFET SPDT switch in low cost leadless QFN surface mount plastic package ideal for CATV applications. Covering DC to 2.5 GHz, the switch offers high isolation, low insertion loss, integrated 75 Ω terminations and an "all off" state. The switch features >80 dB isolation at 5 MHz and >55 dB isolation up to 1 GHz. The switch operates using complementary positive control voltage logic lines of +5/0V and requires a +5V bias supply (VDD). This switch offers excellent performance in both 50 Ω & 75 Ω systems for either SPDT or SPST functions.APPLICATIONS75 Ohm SystemsCATV Signal Distribution, Cable ModemHeadend & DBS IF Switching50 Ohm SystemsBasestation Infrastructure & Test Equipment

The HMC349AMS8G is a gallium arsenide (GaAs), pseudo-morphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz.The HMC349AMS8G is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB of 34 dBm.The HMC349AMS8G operates with a single positive supply voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible control interface.The HMC349AMS8G comes in an 8-lead mini small outline package with an exposed pad.ApplicationsCellular/4G infrastructureWireless infrastructureMobile radiosTest equipment

The HMC351S8(E) is a double balanced mixer in 8 lead plastic surface mount package. The passive GaAs schottky diode mixer implements planar on chip baluns and requires no external components. The mixer can be used as an upconverter, down converter, or modulator. The mixer provides 9 dB conversion loss and +25 dBm IIP3 with LO drive levels of +19 dBm. The design was optimized for low cost high volume applications where high converter linearity is required. The high LO suppression of 42 dB yields excellent carrier suppression for modulator applications.ApplicationsCellular BasestationsCable ModemsFixed Wireless Access Systems

The HMC356LP3(E) is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier is ideal for GSM & CDMA cellular basestation and Mobile Radio front-end receivers operating between 350 and 550 MHz. This LNA has been optimized to provide 1 dB noise figure, 17 dB gain and +38 dBm output IP3 from a single supply of +5V @ 104 mA. Input and output return losses are 15 dB typical, with the LNA requiring only four external components to optimize the RF input match, RF ground and DC bias.ApplicationsGSM 450 & GSM 480CDMA 450Private Land Mobile Radio

The HMC3587LP 3BE is a HBT Gain Block MMI C amplifier covering 4 GHz to 10 GHz and packaged in a 3×3 mm plastic QFN SM T package. This versatile amplifier can be used as a cascadable IF or RF gain stage in 50 Ohm applications. The HMC3587LP 3BE delivers 14.5 dB gain, and +13 dBm output P1dB with only 3.5 dB noise figure.ApplicationsCellular / PCS / 3GFixed Wireless & WLANCATV, Cable Modem & DBSMicrowave Radio & Test EquipmentIF & RF Applications