ADG779 Series

CMOS, Low Voltage 2.5 Ω SPDT Switch / 2:1 Mux

Catalog

CMOS, Low Voltage 2.5 Ω SPDT Switch / 2:1 Mux

Part	Switch Time (Ton, Toff) (Max) [y]	Switch Time (Ton, Toff) (Max) [x]	Voltage - Supply, Single (V+) [Min]	Voltage - Supply, Single (V+) [Max]	Package / Case	-3db Bandwidth	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Switch Circuit	Channel Capacitance (CS(off), CD(off)) [custom]	Channel Capacitance (CS(off), CD(off)) [custom]	Channel-to-Channel Matching (ΔRon)	Current - Leakage (IS(off)) (Max)	On-State Resistance (Max) [Max]	Mounting Type	Multiplexer/Demultiplexer Circuit	Crosstalk	Number of Circuits
Analog Devices ADG779BKSZ-REEL7	3 ns	14 ns	1.8 V	5.5 V	6-TSSOP SC-88 SOT-363	200 MHz	SC-70-6	85 °C	-40 °C	SPDT	7 pF	7 pF	100 mOhm	10 pA	5 Ohms	Surface Mount	2:1	-82 dB	1
Analog Devices ADG779BKS-REEL7					6-TSSOP SC-88 SOT-363		SC-70-6									Surface Mount
Analog Devices ADG779BKSZ-REEL	3 ns	14 ns	1.8 V	5.5 V	6-TSSOP SC-88 SOT-363	200 MHz	SC-70-6	85 °C	-40 °C	SPDT	7 pF	7 pF	100 mOhm	10 pA	5 Ohms	Surface Mount	2:1	-82 dB	1

Catalog

CMOS, Low Voltage 2.5 Ω SPDT Switch / 2:1 Mux

Key Features

• 1.8 V to 5.5 V single supply

• 2.5 Ω on resistance

• 0.75 Ω on-resistance flatness

• −3 dB bandwidth >200 MHz

• Rail-to-rail operation

• 6-lead SC70 package

• Fast switching timestON20 nstOFF6 ns

• tON20 ns

• tOFF6 ns

• Typical power consumption (<0.01 μW)

• TTL/CMOS compatible

Description

The ADG779 is a monolithic CMOS SPDT switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, low leakage currents and -3 dB bandwidths of greater than 200 MHz can be achieved.The ADG779 can operate from a single supply range of 1.8 V to 5.5 V, making it ideal for use in battery-powered instruments and with the new generation of DACs and ADCs from Analog Devices.