W66CQ2 Series

Catalog

DRAM CHIP MOBILE LPDDR4X SDRAM 4GBIT 128MX32 1.1V/1.8V 200-PIN WFBGA

Part	Technology	Memory Size	Supplier Device Package	Memory Type	Memory Format	Access Time	Voltage - Supply [Min]	Voltage - Supply [Max]	Write Cycle Time - Word, Page	Clock Frequency	Operating Temperature [Min]	Operating Temperature [Max]	Memory Interface	Package / Case	Memory Organization	Mounting Type
Winbond Electronics W66CQ2NQUAGJ	SDRAM - Mobile LPDDR4X	512 kB	200-WFBGA (10x14.5)	Volatile	DRAM	3.5 ns	1.06 V 1.7 V	1.17 V 1.95 V	18 ns	1866 MHz	-40 °C	105 °C	LVSTL_11	200-WFBGA	128 M	Surface Mount
Winbond Electronics W66CQ2NQUAFJ	SDRAM - Mobile LPDDR4X	512 kB	200-WFBGA (10x14.5)	Volatile	DRAM	3.5 ns	1.06 V 1.7 V	1.17 V 1.95 V		2.133 GHz	-40 °C	105 °C	LVSTL_11	200-WFBGA	128 M	Surface Mount
Winbond Electronics W66CQ2NQUAHJ TR	SDRAM - Mobile LPDDR4X	512 kB	200-WFBGA (10x14.5)	Volatile	DRAM	3.5 ns	1.06 V 1.7 V	1.17 V 1.95 V	18 ns	2.133 GHz	-40 °C	105 °C	LVSTL_11	200-WFBGA	128 M	Surface Mount
Winbond Electronics W66CQ2NQUAGJ TR	SDRAM - Mobile LPDDR4X	512 kB	200-WFBGA (10x14.5)	Volatile	DRAM	3.5 ns	1.06 V 1.7 V	1.17 V 1.95 V	18 ns	1866 MHz	-40 °C	105 °C	LVSTL_11	200-WFBGA	128 M	Surface Mount
Winbond Electronics W66CQ2NQQAHJ	SDRAM - Mobile LPDDR4X	512 kB	200-TFBGA (10x14.5)	Volatile	DRAM	3.6 ns	1.06 V 1.7 V	1.17 V 1.95 V	18 ns	2.133 GHz	-40 °C	105 °C	LVSTL_11	200-TFBGA	128 M	Surface Mount
Winbond Electronics W66CQ2NQUAFJ TR	SDRAM - Mobile LPDDR4X	512 kB	200-WFBGA (10x14.5)	Volatile	DRAM	3.5 ns	1.06 V 1.7 V	1.17 V 1.95 V	18 ns	1600 MHz	-40 °C	105 °C	LVSTL_11	200-WFBGA	128 M	Surface Mount
Winbond Electronics W66CQ2NQUAHJ	SDRAM - Mobile LPDDR4X	512 kB	200-WFBGA (10x14.5)	Volatile	DRAM	3.5 ns	1.06 V 1.7 V	1.17 V 1.95 V	18 ns	2.133 GHz	-40 °C	105 °C	LVSTL_11	200-WFBGA	128 M	Surface Mount