Discrete Semiconductor Products
RJ1G10BBGTL1
ActiveRohm Semiconductor
NCH 40V 280A, TO-263AB, POWER MOSFET
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Discrete Semiconductor Products
RJ1G10BBGTL1
ActiveRohm Semiconductor
NCH 40V 280A, TO-263AB, POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RJ1G10BBGTL1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 105 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 13200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 192 W |
| Rds On (Max) @ Id, Vgs | 1.43 mOhm |
| Supplier Device Package | TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 6.76 | |
Description
General part information
RJ1G10BBG Series
RJ1G10BBG is a power MOSFET with low on-resistance and high power package, suitable for switching, motor drives, and DC/DC converter.
Documents
Technical documentation and resources