Catalog
Nch 40V 280A, TO-263AB, Power MOSFET
Description
AI
RJ1G10BBG is a power MOSFET with low on-resistance and high power package, suitable for switching, motor drives, and DC/DC converter.
Beta
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Nch 40V 280A, TO-263AB, Power MOSFET
Nch 40V 280A, TO-263AB, Power MOSFET
| Part | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Supplier Device Package | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Package / Case | Operating Temperature | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 40 V | 210 nC | 4.5 V 10 V | N-Channel | TO-263AB | MOSFET (Metal Oxide) | 105 A | 20 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 150 °C | 2.5 V | 192 W | Surface Mount | 13200 pF | 1.43 mOhm |